Polar Power MOSFET HiPerFET

Polar™ HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Fast Recovery Diode • Avalanche Rated • Low Package Inductance Advantages • Easy to Mount • Space Savings • High Power Density Applications • Hig

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

Power MOSFETs

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N通道HiPerFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 1200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.04mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

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