isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 140A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION · AC Motor Drives · DC-DC Converters · Battery Chargers · Switch-Mode and Resonant-Mode Power Supplies

PolarHV HiPerFET Power MOSFETs

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 137A, RDS(ON) = 7.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 137A, RDS(ON) = 7.5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead-free plating ; RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 137A, RDS(ON) = 7.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 150A, RDS(ON) = 7.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-3P package. RoHS compliant.

N-Channel MOSFET uses advanced trench technology

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