N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

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N通道沟槽栅MOSFET

HiPerFET Power MOSFETs

Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC con

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 120A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 120A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

Polar Power MOSFET HiPerFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • International Standard Packages • Fast Intrinsic Diode • Avalanche Rated • Low Package Inductance Advantages • Easy to Mount • Space Savings • High Power Density Applications • Switched-Mode and Resonant-Mode Powe