iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.63Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

PolarHVHiPerFETPowerMOSFET

文件：152.61 Kbytes Page：5 Pages

14A,600VN-CHANNELPOWERMOSFET

FEATURES *RDS(ON)≤0.55Ω@VGS=10V,ID=7.0A *Fastswitchingcapability *Avalancheenergytested *Improveddv/dtcapability,highruggedness

14A,600VN-CHANNELPOWERMOSFET

FEATURES *RDS(ON)≤0.6Ω@VGS=10V,ID=7.0A *Fastswitchingcapability *Avalancheenergyspecified *Improveddv/dtcapability,highruggedness

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.49Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

DrainCurrentID=14A@TC=25C

文件：136.1 Kbytes Page：2 Pages

N-ChannelEnhancementModeMOSFET

文件：249.73 Kbytes Page：4 Pages