IXDR30N120价格

参考价格:¥44.9688

型号:IXDR30N120D1 品牌:Ixys 备注:这里有IXDR30N120多少钱,2025年最近7天走势,今日出价,今日竞价,IXDR30N120批发/采购报价,IXDR30N120行情走势销售排行榜,IXDR30N120报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IXDR30N120

High Voltage IGBT with optional Diode ISOPLUSTM package

High Voltage IGBT with optional Diode ISOPLUS™ package (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA Features • NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability -

IXYS

IXDR30N120

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT 1200V 50A 200W ISOPLUS247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

High Voltage IGBT with optional Diode ISOPLUSTM package

High Voltage IGBT with optional Diode ISOPLUS™ package (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA Features • NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability -

IXYS

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1200V 50A 200W ISOPLUS247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

Field stop trench technology

General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Features • Fi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Field stop trench technology

General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Features • Fi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

1200V, 30A Trench IGBT

文件:614.76 Kbytes Page:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

1200V, 30A Trench IGBT

文件:614.76 Kbytes Page:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Discrete IGBT (High-Speed V series) 1200V / 30A

文件:559.44 Kbytes Page:6 Pages

Fuji

富士电机

IXDR30N120产品属性

  • 类型

    描述

  • 型号

    IXDR30N120

  • 功能描述

    IGBT 晶体管 30 Amps 1200V

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-8-14 13:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS/艾赛斯
22+
ISOPLUS247
25000
只做原装进口现货,专注配单
Littelfuse/IXYS
24+
TO-247
928
原厂订货渠道,支持BOM配单一站式服务
IXYS艾赛斯
1626+
TO247
1225
代理品牌
24+
N/A
78000
一级代理-主营优势-实惠价格-不悔选择
IXYS
2447
Through Hole
105000
30个/管一级代理专营品牌!原装正品,优势现货,长期
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS
22+
ISOPLUS247?
9000
原厂渠道,现货配单
IXYS
24+
6-DFN(4x5)
36500
一级代理/放心采购
IXYS
24+
6-DFN(4x5)
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
IXYS
25+
TO-247-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

IXDR30N120数据表相关新闻