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IXDR30N120价格
参考价格：￥44.9688
型号：IXDR30N120D1 品牌：Ixys 备注：这里有IXDR30N120多少钱，2026年最近7天走势，今日出价，今日竞价，IXDR30N120批发/采购报价，IXDR30N120行情走势销售排行榜，IXDR30N120报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXDR30N120 | High Voltage IGBT with optional Diode ISOPLUSTM package High Voltage IGBT with optional Diode ISOPLUS™ package (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA Features • NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability - | IXYS 艾赛斯 |   | |
IXDR30N120 | 封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 50A 200W ISOPLUS247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS 艾赛斯 | | |
IXDR30N120 | NPT 标准 IGBT | Littelfuse 力特 | | |
High Voltage IGBT with optional Diode ISOPLUSTM package High Voltage IGBT with optional Diode ISOPLUS™ package (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA Features • NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability - | IXYS 艾赛斯 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 50A 200W ISOPLUS247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS 艾赛斯 | | ||
Field stop trench technology General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Features • Fi | Fairchild 仙童半导体 | | ||
Field stop trench technology General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Features • Fi | Fairchild 仙童半导体 | | ||
1200V, 30A Trench IGBT 文件：614.76 Kbytes Page：9 Pages | Fairchild 仙童半导体 | | ||
1200V, 30A Trench IGBT 文件：614.76 Kbytes Page：9 Pages | Fairchild 仙童半导体 | | ||
Discrete IGBT (High-Speed V series) 1200V / 30A 文件：559.44 Kbytes Page：6 Pages | Fuji 富士通 | |
IXDR30N120产品属性
- 类型
描述
- 型号
IXDR30N120
- 功能描述
IGBT 晶体管 30 Amps 1200V
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
78000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IXYS |
24+ |
6-DFN(4x5) |
36500 |
一级代理/放心采购 |
|||
IXYS |
23+ |
SOP28 |
150 |
全新原装正品现货,支持订货 |
|||
Littelfuse/IXYS |
24+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
IXYS/艾赛斯 |
24+ |
NA/ |
3356 |
原装现货,当天可交货,原型号开票 |
|||
IXYS |
2447 |
Through Hole |
105000 |
30个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
IXYS |
24+ |
6-DFN(4x5) |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
|||
IXYS |
25+ |
6-DFN4x5 |
4258 |
原装正品 价格优势 |
|||
IXYS艾赛斯 |
1626+ |
TO247 |
1225 |
代理品牌 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
IXDR30N120芯片相关品牌
IXDR30N120规格书下载地址
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IXDR30N120数据表相关新闻
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进口代理
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IXDD614YI，全新原装当天发货或门市自取0755-82732291.
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代理渠道供应全新原装IXFH34N65X2-IXYS场效应管
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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