位置：首页 > IC中文资料第376页 > IXBN42N170
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features •InternationalStandardPackage •miniBLOC,withAluminiumNitrideIsolation •SquareRBSOA •2500V~IsolationVoltage •HighBlockingVoltage •InternationalStandardPackage •Anti-ParallelDiode •LowConductionLosses Advantages •LowGateDriveRequirement •HighPowerDe | IXYS IXYS Integrated Circuits Division |  |   | |
封装/外壳：SOT-227-4，miniBLOC 包装：托盘 描述：IGBT MOD 1700V 42A 312W SOT227B 分立半导体产品 晶体管 - IGBT - 模块 | IXYS IXYS Integrated Circuits Division | | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor VCES=1700V IC25=75A VCE(sat)=3.3V Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Lowconductionlosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0flammabilityclassification Applicatio | IXYS IXYS Integrated Circuits Division | | | |
BIMOSFETMonolithicBipolarMOSTransistor Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Fastswitching •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0flammabilityclassification Applications •ACmotorspeedcontrol | IXYS IXYS Integrated Circuits Division | | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features ●SiliconchiponDirect-CopperBond(DCB)substrate ●Isolatedmountingsurface ●2500Velectricalisolation Advantages ●Lowgatedriverequirement ●Highpowerdensity Applications: ●Switched-modeandresonant-modepowersupplies ●Uninterruptiblepowersupplies(UPS) ●Lase | IXYS IXYS Integrated Circuits Division | | | |
BIMOSFETMonolithicBipolarMOSTransistor Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Fastswitching •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0flammabilityclassification Applications •ACmotorspeedcontrol | IXYS IXYS Integrated Circuits Division | | |
IXBN42N170产品属性
- 类型
描述
- 型号
IXBN42N170
- 功能描述
IGBT 晶体管 42 Amps 1700V 6.0 V Rds
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
|||
IXYS |
23+ |
SOT227B |
9000 |
原装正品，支持实单 |
|||
IXYS |
2305+ |
原厂封装 |
5000 |
15年芯片行业经验/只供原装正品:0755-83273353邹小姐 |
|||
IXYS |
18+ |
SOT227 |
2050 |
公司大量全新原装 正品 随时可以发货 |
|||
IXYS |
24+ |
SOT-227-4,miniBLOC |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IXYS |
2022 |
SOT-227-4,miniBLOC |
58 |
原厂原装正品,价格超越代理 |
|||
IXYS-艾赛斯 |
24+25+/26+27+ |
SOT-227 |
2368 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IXYS |
23+ |
ICTRANSBIPO1700VSOT-227 |
1690 |
专业代理销售半导体模块,能提供更多数量 |
|||
IXYS |
22+ |
SOT227B |
9000 |
原厂渠道,现货配单 |
|||
IXYS/艾赛斯 |
21+ROHS |
SOT-227 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
IXBN42N170芯片相关品牌
IXBN42N170规格书下载地址
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IXBN42N170数据表相关新闻
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2020-6-16IX9915N
具有350V达林顿晶体管的低压误差放大器–IX9915系列 IXYS集成电路在具有350V达林顿晶体管的误差放大器中提供多功能产品设计
2020-4-10
DdatasheetPDF页码索引
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