REFLECTIVE OPTICAL SWITCHES

DESCRIPTION\nThe ISTS149, ISTS703A, ISTS708 each consist of an infrared emitting diode and a NPN silicon photo transistor mounted side by side on converging axes in a polycarbonate housing. The package is designed to optimise the mechanical resolution, coupling efficiency, ambient light rejection, c ● Phototransistor output\n● Opaque housing provides improved visible light rejection\n● Three available package types\n● Adjustable side-mounting provision\n● Also available with flying leads, with or without connector, supplied as required;

REFLECTIVE OPTICAL SWITCHES

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PNP 5 GHz wideband transistor

DESCRIPTION PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers (30 to 860 MHz) and in microwave amplifiers such as radar systems, spectrum analyzers, etc., using SMD technology.

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

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