N-Channel MOSFET Transistor

• DESCRITION • Improved Transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤100mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

CoolMOSTM Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Pb-free lead plating; RoHS compliant • Qualified according to JEDEC) for target applications

N-Channel MOSFET Transistor

• DESCRITION • Improved Transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤100mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dtrated • Ultra low effective capacitances • Improved transconductance

丝印代码：35N60C3；CoolMOSTM Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Pb-free lead plating; RoHS compliant • Qualified according to JEDEC) for target applications