N-Channel MOSFET Transistor

• DESCRITION • New revolutionary high voltage technology • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤280mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and relia

isc N-Channel MOSFET Transistor

• DESCRITION • Improved Transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤280mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：729.27 Kbytes Page：14 Pages

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：729.27 Kbytes Page：14 Pages