型号 功能描述 生产厂家&企业 LOGO 操作
ISPP12N50C3

N-ChannelMOSFETTransistor

•DESCRITION •Newrevolutionaryhighvoltagetechnology •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancean

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
ISPP12N50C3

N-ChannelMOSFETTransistor

•DESCRITION •Newrevolutionaryhighvoltagetechnology •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancean

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

iscN-ChannelMOSFETTransistor

•DESCRITION •ImprovedTransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel650V(D-S)MOSFET

文件:1.03243 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
更新时间:2025-7-20 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LATTICE/莱迪斯
22+
SOP28
34531
原装正品现货
LATTICE
24+
DIP28
5000
全新原装正品,现货销售
ST
24+
875
LATTICE
2022+
SOP28
20000
只做原装进口现货.假一罚十
LATTICE
2447
SOP28
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
LATTICE
23+
SOP28
7000
LATTICE/莱迪斯
21+
SOP28
1709
LATTICE
20+
DIP
19570
原装优势主营型号-可开原型号增税票
LAT
23+
65480
LATTICE
20+
SOP-28
2960
诚信交易大量库存现货

ISPP12N50C3芯片相关品牌

  • BILIN
  • Cree
  • DIT
  • ETC
  • HY
  • MOLEX2
  • OHMITE
  • RCD
  • SAMESKY
  • spansion
  • TOKEN
  • VBSEMI

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