HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

[Isocom] DESCRIPTION The ISP817, ISP827 and ISP847 series of optically coupled isolator consist of an infrared light emitting diode and an NPN silicon photo transistor in a space efficient Dual In Line Plastic Package. FEATURES • AC Isolation Voltage 5300VRMS • CTR Selections Available • Wid

晶体管光耦

The ISP827 series provide two channel operation, and each combines an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP8 package with different lead forming options.With the robust coplanar double mold structure, IS • High isolation 5000 VRMS\n• DC input with transistor output\n• Operating temperature range - 40 °C to 110 °C\n• REACH compliance\n• Halogen free (Optional)\n• MSL class 1\n• Regulatory Approvals \n• UL - UL1577\n• VDE - EN60747-5-5(VDE0884-5)\n• CQC – GB4943.1;

封装/外壳：8-SMD，鸥翼 包装：管件 描述：OPTOISO 5.3KV 2CH TRANS 8SMD 隔离器 光隔离器 - 晶体管，光电输出

Optocoupler, Phototransistor Output

Description In the K817P/ K827PH/ K847PH parts each channel consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin (single); 8 pin (dual); 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed d

High Density Mounting Type Photocoupler

PC817X Seriescontains an IRED optically coupled to a phototransistor. ( PC817A, PC817B, PC817C, PC817D ) It is packaged in a 4pin DIP, available in wide-lead spacing option and SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV.Collector-emitter voltage is 80V(*) and CTR i

High Density Mounting Type Photocoupler

PC817X Seriescontains an IRED optically coupled to a phototransistor. ( PC817A, PC817B, PC817C, PC817D ) It is packaged in a 4pin DIP, available in wide-lead spacing option and SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV.Collector-emitter voltage is 80V(*) and CTR i

NPN SILICON EPITAXIAL TWIN TRANSISTOR

FEATURES • High gain with low operating current |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • 6-pin thin-type small mini mold package • Built-in 2 transistors (2 u 2SC5179)

10-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS

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