Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads

Features • VCC(AMR) = 45 V • Wide process side op. range VCC = 9.2 to 36 V • RDS(on) = 0.125 Ω per channel (TYP) • Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V • Per channel process side op. current – ISO808A IOUT

电流隔离型八进制高侧固态功率继电器，配备的SPI接口适用于高感性负载

ISO808A、ISO808A-1 (PowerSO-36)、ISO808AQ和ISO808AQ-1 (TFQFPN32) 均为电流隔离8通道驱动器，具有低供电电流。每个驱动器包含两个独立的电流隔离型电压域（VCC和VDD，分别用于处理级和控制逻辑级）。这些IC用于驱动任何一侧接地的负载。\n\n 控制逻辑级具有8位输出状态寄存器（可供MCU在处理级中设置输出通道的开/关状态），支持使用菊花链。处理级和控制逻辑级借助意法半导体的专用协议，通过电流隔离通道进行通信。\n\n 每个通道都有独立的有源电流限制 (OVL) 和热关断 (OVT)，可以保护器件，防止过载。\n\n 内置的热关断可以保护每 • VCC(AMR) = 45 V \n• 宽进程端工作范围VCC = 9.2至36 V \n• RDS(on)= 0.125 Ω/通道（典型值） \n• 感应负载快速退磁VDEMAG(TYP) = VCC - 54 V \n• 每通道的进程端工作电流 \n •ISO808A/ISO808AQ IOUT < 0.7 A \n •ISO808A-1/ISO808AQ-1 IOUT < 1 A \n• 低进程端和逻辑侧供电电流 \n• 带自动重启和滞回的欠电压关断 \n• 兼容5 V和3.3 V TTL/CMOS及MCU的I/O \n• 逻辑侧SPI接口 \n• 通用输出启用/禁用引脚 \n• 用;

电流隔离八进制高侧功率固态继电器，装配SPI接口，适用于高感性负载1A 36V

ISO808A、ISO808A-1 (PowerSO-36)、ISO808AQ和ISO808AQ-1 (TFQFPN32) 均为电流隔离8通道驱动器，具有低供电电流。每个驱动器包含两个独立的电流隔离型电压域（VCC和VDD，分别用于处理级和控制逻辑级）。这些IC用于驱动任何一侧接地的负载。\n\n 控制逻辑级具有8位输出状态寄存器（可供MCU在处理级中设置输出通道的开/关状态），支持使用菊花链。处理级和控制逻辑级借助意法半导体的专用协议，通过电流隔离通道进行通信。\n\n 每个通道都有独立的有源电流限制 (OVL) 和热关断 (OVT)，可以保护器件，防止过载。\n\n 内置的热关断可以保护每 • VCC(AMR) = 45 V \n• 宽进程端工作范围VCC = 9.2至36 V \n• RDS(on)= 0.125 Ω/通道（典型值） \n• 感应负载快速退磁VDEMAG(TYP) = VCC - 54 V \n• 每通道的进程端工作电流 \n •ISO808A/ISO808AQ IOUT < 0.7 A \n •ISO808A-1/ISO808AQ-1 IOUT < 1 A \n• 低进程端和逻辑侧供电电流 \n• 带自动重启和滞回的欠电压关断 \n• 兼容5 V和3.3 V TTL/CMOS及MCU的I/O \n• 逻辑侧SPI接口 \n• 通用输出启用/禁用引脚 \n• 用;

Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads

Features • VCC(AMR) = 45 V • Wide process side op. range VCC = 9.2 to 36 V • RDS(on) = 0.125 Ω per channel (TYP) • Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V • Per channel process side op. current – ISO808A IOUT

Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads

Features • VCC(AMR) = 45 V • Wide process side op. range VCC = 9.2 to 36 V • RDS(on) = 0.125 Ω per channel (TYP) • Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V • Per channel process side op. current – ISO808A IOUT

Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads

Features • VCC(AMR) = 45 V • Wide process side op. range VCC = 9.2 to 36 V • RDS(on) = 0.125 Ω per channel (TYP) • Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V • Per channel process side op. current – ISO808A IOUT

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)