Galvanic isolated octal high-side power solid state relay for high inductive loads

Features • VCC(AMR) = 45 V • Wide process side op. range VCC = 9.2 to 36 V • RDS(on) = 0.125 Ω per channel (TYP) • Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V • Per channel process side op. current – ISO808 IOUT

用于高感性负载的电流隔离8通道高侧电源固态继电器

\n\n ISO808和ISO808-1是两款电流隔离8通道驱动器，具有低供电电流。每个驱动器包含两个独立的电流隔离型电压域（VCC和VDD），分别用于处理级和控制逻辑级。这些IC用于驱动任何一侧接地的负载。\n\n\n\n 每个通道都有独立的有源电流限制 (OVL) 和热关断 (OVT)，可以保护器件，防止过载。\n\n\n\n 内置的热关断可以保护每个通道免受过温和过载：每个过热通道都会在其结温触发保护阈值 (TJSD) 后自动关闭。如果其结温降低至重启阈值 (TJR) 以下，则通道将重新打开。\n\n\n\n 额外的壳温传感器负责保护整块芯片免受过温（OVC事件）：如果壳温触发TCSD阈 • VCC(AMR) = 45 V \n• 宽进程端工作范围VCC = 9.2至36 V \n• RDS(on) = 0.125 Ω/通道（典型值） \n• 感应负载快速退磁VDEMAG(TYP) = VCC - 54 V \n• 每通道的进程端工作电流 \n •ISO808 IOUT < 0.7 A \n •ISO808-1 IOUT < 1 A \n• 低进程端和逻辑侧供电电流 \n• 带自动重启和滞回的欠电压关断 \n• 兼容5 V和3.3 V TTL/CMOS及MCU的I/O \n• 通用输出启用/禁用引脚 \n• 用于禁用IC输出的复位功能• 较高的共模瞬态抗扰度 \n• 带短路保护;

Isolated 12-Bit Sampling ANALOG-TO-DIGITAL CONVERTER

文件：171 Kbytes Page：7 Pages

DISCONTINUED PRODUCT. No longer recommended for new design.

Galvanic isolated octal high-side power solid state relay for high inductive loads

Features • VCC(AMR) = 45 V • Wide process side op. range VCC = 9.2 to 36 V • RDS(on) = 0.125 Ω per channel (TYP) • Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V • Per channel process side op. current – ISO808 IOUT

电流隔离八进制高侧功率固态继电器，适用于高感性负载1A 36V

\n\n ISO808和ISO808-1是两款电流隔离8通道驱动器，具有低供电电流。每个驱动器包含两个独立的电流隔离型电压域（VCC和VDD），分别用于处理级和控制逻辑级。这些IC用于驱动任何一侧接地的负载。\n\n\n\n 每个通道都有独立的有源电流限制 (OVL) 和热关断 (OVT)，可以保护器件，防止过载。\n\n\n\n 内置的热关断可以保护每个通道免受过温和过载：每个过热通道都会在其结温触发保护阈值 (TJSD) 后自动关闭。如果其结温降低至重启阈值 (TJR) 以下，则通道将重新打开。\n\n\n\n 额外的壳温传感器负责保护整块芯片免受过温（OVC事件）：如果壳温触发TCSD阈 • VCC(AMR) = 45 V \n• 宽进程端工作范围VCC = 9.2至36 V \n• RDS(on) = 0.125 Ω/通道（典型值） \n• 感应负载快速退磁VDEMAG(TYP) = VCC - 54 V \n• 每通道的进程端工作电流 \n •ISO808 IOUT < 0.7 A \n •ISO808-1 IOUT < 1 A \n• 低进程端和逻辑侧供电电流 \n• 带自动重启和滞回的欠电压关断 \n• 兼容5 V和3.3 V TTL/CMOS及MCU的I/O \n• 通用输出启用/禁用引脚 \n• 用于禁用IC输出的复位功能• 较高的共模瞬态抗扰度 \n• 带短路保护;

Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads

Features • VCC(AMR) = 45 V • Wide process side op. range VCC = 9.2 to 36 V • RDS(on) = 0.125 Ω per channel (TYP) • Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V • Per channel process side op. current – ISO808A IOUT

Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads

Features • VCC(AMR) = 45 V • Wide process side op. range VCC = 9.2 to 36 V • RDS(on) = 0.125 Ω per channel (TYP) • Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V • Per channel process side op. current – ISO808A IOUT

Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads

Features • VCC(AMR) = 45 V • Wide process side op. range VCC = 9.2 to 36 V • RDS(on) = 0.125 Ω per channel (TYP) • Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V • Per channel process side op. current – ISO808A IOUT

Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads

Features • VCC(AMR) = 45 V • Wide process side op. range VCC = 9.2 to 36 V • RDS(on) = 0.125 Ω per channel (TYP) • Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V • Per channel process side op. current – ISO808A IOUT

Galvanic isolated octal high-side power solid state relay for high inductive loads

Features • VCC(AMR) = 45 V • Wide process side op. range VCC = 9.2 to 36 V • RDS(on) = 0.125 Ω per channel (TYP) • Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V • Per channel process side op. current – ISO808 IOUT

Galvanic isolated octal high-side power solid state relay for high inductive loads

Features • VCC(AMR) = 45 V • Wide process side op. range VCC = 9.2 to 36 V • RDS(on) = 0.125 Ω per channel (TYP) • Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V • Per channel process side op. current – ISO808 IOUT

Isolated 12-Bit Sampling ANALOG-TO-DIGITAL CONVERTER

文件：171 Kbytes Page：7 Pages

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)