丝印代码：ISO124P；ISO124 ±10-V Input, Precision Isolation Amplifier

1 Features 1• 100% Tested for High-Voltage Breakdown • Rated 1500 Vrms • High IMR: 140 dB at 60 Hz • Maximum Nonlinearity: 0.010% • Bipolar Operation: VO = ±10 V • Packages: PDIP-16 and SOIC-28 • Ease of Use: Fixed Unity Gain Configuration • Supply Range: ±4.5-V to ±18-V 2 Appli

丝印代码：ISO124P；ISO124 ±10-V Input, Precision Isolation Amplifier

1 Features 1• 100% Tested for High-Voltage Breakdown • Rated 1500 Vrms • High IMR: 140 dB at 60 Hz • Maximum Nonlinearity: 0.010% • Bipolar Operation: VO = ±10 V • Packages: PDIP-16 and SOIC-28 • Ease of Use: Fixed Unity Gain Configuration • Supply Range: ±4.5-V to ±18-V 2 Appli

ISO124 ±10-V Input, Precision Isolation Amplifier

1 Features 1• 100% Tested for High-Voltage Breakdown • Rated 1500 Vrms • High IMR: 140 dB at 60 Hz • Maximum Nonlinearity: 0.010% • Bipolar Operation: VO = ±10 V • Packages: PDIP-16 and SOIC-28 • Ease of Use: Fixed Unity Gain Configuration • Supply Range: ±4.5-V to ±18-V 2 Appli

Precision Lowest-Cost

文件：947.12 Kbytes Page：19 Pages

Precision Lowest-Cost Isolation Amplifier

文件：1.08606 Mbytes Page：28 Pages

Precision Lowest Cost ISOLATION AMPLIFIER

文件：252.36 Kbytes Page：12 Pages

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

NPN SILICON BIAS RESISTOR TRANSISTOR

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