丝印代码：ISO124P；ISO124 ±10-V Input, Precision Isolation Amplifier

1 Features 1• 100% Tested for High-Voltage Breakdown • Rated 1500 Vrms • High IMR: 140 dB at 60 Hz • Maximum Nonlinearity: 0.010% • Bipolar Operation: VO = ±10 V • Packages: PDIP-16 and SOIC-28 • Ease of Use: Fixed Unity Gain Configuration • Supply Range: ±4.5-V to ±18-V 2 Appli

丝印代码：ISO124P；ISO124 ±10-V Input, Precision Isolation Amplifier

1 Features 1• 100% Tested for High-Voltage Breakdown • Rated 1500 Vrms • High IMR: 140 dB at 60 Hz • Maximum Nonlinearity: 0.010% • Bipolar Operation: VO = ±10 V • Packages: PDIP-16 and SOIC-28 • Ease of Use: Fixed Unity Gain Configuration • Supply Range: ±4.5-V to ±18-V 2 Appli

ISO124 ±10-V Input, Precision Isolation Amplifier

1 Features 1• 100% Tested for High-Voltage Breakdown • Rated 1500 Vrms • High IMR: 140 dB at 60 Hz • Maximum Nonlinearity: 0.010% • Bipolar Operation: VO = ±10 V • Packages: PDIP-16 and SOIC-28 • Ease of Use: Fixed Unity Gain Configuration • Supply Range: ±4.5-V to ±18-V 2 Appli

Precision Lowest Cost ISOLATION AMPLIFIER

文件：252.36 Kbytes Page：12 Pages

Precision Lowest-Cost

文件：947.12 Kbytes Page：19 Pages

Precision Lowest-Cost Isolation Amplifier

文件：1.08606 Mbytes Page：28 Pages

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

NPN SILICON BIAS RESISTOR TRANSISTOR

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PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SC-59 plastic package. NPN complement: PDTC124EK. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

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