Low-Cost, High-Voltage, Internally Powered OUTPUT ISOLATION AMPLIFIER

DESCRIPTION\nThe ISO113 output isolation amplifier provides both signal and output power across an isolation barrier in a small double-wide DIP package. The ceramic non hermetic hybrid package with side-brazed pins contains a transformer-coupled DC/DC converter and a capacitor-coupled signal channel ●SELF-CONTAINED ISOLATED SIGNAL AND OUTPUT POWER\n●SMALL PACKAGE SIZE: Double-Wide (0.6\") Sidebraze DIP\n●CONTINUOUS AC BARRIER RATING: 1500Vrms\n●WIDE BANDWIDTH: 20kHz Small Signal, 20kHz Full Power\n●BUILT-IN ISOLATED OUTPUT POWER: ±10V to ±18V Input, ±50mA Output\n●MULTICHANNEL SYNCHRONIZATION C;

Low-Cost, High-Voltage, Internally Powered OUTPUT ISOLATION AMPLIFIER

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Low-Cost, High-Voltage, Internally Powered OUTPUT ISOLATION AMPLIFIER

文件：104.72 Kbytes Page：8 Pages

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages