High Speed, Dual Channel, 6A, 4.5 to 16VOUT, Power MOSFET Driver

文件：377.95 Kbytes Page：13 Pages

High Speed, Dual Channel, 6A, 4.5 to 16VOUT, Power MOSFET Drivers

文件：686.32 Kbytes Page：14 Pages

封装/外壳：8-WDFN 裸露焊盘 包装：卷带（TR） 描述：IC GATE DRVR LOW-SIDE 8TDFN 集成电路（IC） 栅极驱动器

High Speed, Dual Channel, 6A, 4.5 to 16VOUT, Power MOSFET Drivers

文件：686.32 Kbytes Page：14 Pages

封装/外壳：8-WDFN 裸露焊盘 包装：卷带（TR） 描述：IC GATE DRVR LOW-SIDE 8TDFN 集成电路（IC） 栅极驱动器

Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ

Features Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package CDM ESD

Dual N-Channel PowerTrench짰 MOSFET 100 V, 2.7 A, 105 m廓

文件：266.45 Kbytes Page：6 Pages

N-Channel Enhancement MOSFET

文件：2.71155 Mbytes Page：5 Pages

Max rDS(on) = 105 m廓 at VGS = 10 V, ID = 2.7 A

文件：251.14 Kbytes Page：7 Pages