SINGLE-CHIP 1TO16 MINUTES DURATION VOICE RECORD/PLAYBAC VOICE DEVICES WITH DIGITAL STORAGE CAPABILITY

文件：1.82411 Mbytes Page：87 Pages

SINGLE-CHIP

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封装/外壳：28-DIP（0.600"，15.24mm） 包装：托盘 描述：IC VOICE REC/PLAY 17MN 28S 28DIP 集成电路（IC） 语音录制和回放

SINGLE-CHIP 1TO16 MINUTES DURATION VOICE RECORD/PLAYBAC VOICE DEVICES WITH DIGITAL STORAGE CAPABILITY

文件：1.82411 Mbytes Page：87 Pages

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption:

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption:

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116S is a static RAM organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It operates at a low supply voltage of 3 V ±10. FEATURES • 2,048 × 8 bit organization • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (

5 CHANNELS VIDEO SWITCH

5 CHANNELS VIDEO SWITCH ■ EACH CHANNEL EXCEPT FAST BLANKING HAS 6dB GAIN ■ R, G, B AND VIDEO SIGNALS ARE CLAMPED TO THESAME REFERENCE VOLTAGEIN ORDER TO HAVE NO OUTPUT DIFFERENTIAL VOLTAGE WHEN SWITCHING ■ ALL INPUT LEVELS COMPATIBLE WITH NFC 92250 AND EN 50049 NORMS ■ 30MHz BAND WIDTH FOR R,

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape/ magazine packing