位置：首页 > IC中文资料第3989页 > IS65
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. | ISSI 北京矽成 |   | ||
128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. | ISSI 北京矽成 | | ||
128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. | ISSI 北京矽成 | | ||
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low | ISSI 北京矽成 | | ||
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low | ISSI 北京矽成 | | ||
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low | ISSI 北京矽成 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When | ISSI 北京矽成 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When | ISSI 北京矽成 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When | ISSI 北京矽成 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When | ISSI 北京矽成 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When | ISSI 北京矽成 | | ||
3mm DIA. MATCHED INFRARED EMITTER DETECTOR PAIR PHOTOTRANSISTOR OUTPUT 文件：47.4 Kbytes Page：3 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | ||
3mm DIA. MATCHED INFRARED EMITTER DETECTOR PAIR PHOTOTRANSISTOR OUTPUT 文件：47.4 Kbytes Page：3 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | ||
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：393.53 Kbytes Page：14 Pages | ISSI 北京矽成 | | ||
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：393.53 Kbytes Page：14 Pages | ISSI 北京矽成 | | ||
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：393.53 Kbytes Page：14 Pages | ISSI 北京矽成 | | ||
128K x 8 LOW POWER CMOS STATIC RAM 文件：313.16 Kbytes Page：11 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
封装/外壳：32-SOIC（0.455"，11.30mm 宽） 包装：卷带（TR） 描述：IC SRAM 1MBIT PARALLEL 32SOP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：32-TFSOP（0.724"，18.40mm 宽） 包装：卷带（TR） 描述：IC SRAM 1MBIT PARALLEL 32TSOP I 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
32K x 8 LOW POWER CMOS STATIC RAM 文件：74.99 Kbytes Page：11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
256K x 16 HIGH-SPEED CMOS STATIC RAM 文件：435.22 Kbytes Page：13 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：92.59 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：625.84 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：625.84 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：92.59 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：625.84 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：92.59 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：625.84 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：92.59 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：92.59 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：625.84 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：92.59 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：625.84 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：92.59 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：625.84 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：92.59 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：92.59 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：625.84 Kbytes Page：12 Pages | ISSI 北京矽成 | | ||
TTL compatible interface levels 文件：512.84 Kbytes Page：14 Pages | ISSI 北京矽成 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 北京矽成 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：97.51 Kbytes Page：17 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 北京矽成 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM 文件：321.19 Kbytes Page：13 Pages | ISSI 北京矽成 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM 文件：321.19 Kbytes Page：13 Pages | ISSI 北京矽成 | | ||
1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM 文件：187.7 Kbytes Page：17 Pages | ISSI 北京矽成 | | ||
1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM 文件：187.7 Kbytes Page：17 Pages | ISSI 北京矽成 | | ||
1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM 文件：187.7 Kbytes Page：17 Pages | ISSI 北京矽成 | | ||
Industrial and Automotive temperature support 文件：1.00408 Mbytes Page：15 Pages | ISSI 北京矽成 | | ||
Industrial and Automotive temperature support 文件：1.00408 Mbytes Page：15 Pages | ISSI 北京矽成 | | ||
TTL compatible interface levels 文件：1.05675 Mbytes Page：15 Pages | ISSI 北京矽成 | | ||
TTL compatible interface levels 文件：1.05675 Mbytes Page：15 Pages | ISSI 北京矽成 | | ||
TTL compatible interface levels 文件：490.43 Kbytes Page：15 Pages | ISSI 北京矽成 | | ||
Data control for upper and lower bytes 文件：758.47 Kbytes Page：15 Pages | ISSI 北京矽成 | | ||
TTL compatible interface levels 文件：490.43 Kbytes Page：15 Pages | ISSI 北京矽成 | | ||
Data control for upper and lower bytes 文件：758.47 Kbytes Page：15 Pages | ISSI 北京矽成 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：133.5 Kbytes Page：19 Pages | ISSI 北京矽成 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：133.5 Kbytes Page：19 Pages | ISSI 北京矽成 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：429.78 Kbytes Page：17 Pages | ISSI 北京矽成 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：429.78 Kbytes Page：17 Pages | ISSI 北京矽成 | |
IS65产品属性
- 类型
描述
- 型号
IS65
- 制造商
IDEC Corporation
- 功能描述
SENS.IND. 10-30VDC PNP NC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
23+ |
BGA |
4500 |
ISSI存储芯片在售 |
|||
ISSI |
24+ |
SMD |
15600 |
静态随机存取存储器1M(128Kx8)45nsAsync静态随机存取 |
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ISSI |
23+ |
32-SOP |
73390 |
专业分销产品!原装正品!价格优势! |
|||
ISSI, |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ISSI |
23+ |
TSOP |
4850 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ISSI |
25+ |
TSOP |
16000 |
原装优势绝对有货 |
|||
ISSI(美国芯成) |
24+ |
TSOPI32 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ISSI Integrated Silicon Soluti |
22+ |
32TSOP I |
9000 |
原厂渠道,现货配单 |
|||
ISSI, Integrated Silicon Solu |
23+ |
32-TSOP I |
7300 |
专注配单,只做原装进口现货 |
|||
ISSI(美国芯成) |
2447 |
SOP-32 |
315000 |
84个/管一级代理专营品牌!原装正品,优势现货,长期 |
IS65芯片相关品牌
IS65规格书下载地址
IS65参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IS80C32
- IS80C31
- IS733H
- IS733
- IS725X
- IS725
- IS70-48
- IS70-24
- IS70-15
- IS70-12
- IS7000
- IS-70
- IS662X
- IS662
- IS661X
- IS661
- IS660X
- IS660
- IS65C256AL-25TA3
- IS65C256AL_12
- IS65C256AL
- IS65C256-20UA2-TR
- IS65C256
- IS65C1024AL-45TLA3-TR
- IS65C1024AL-45TLA3
- IS65C1024AL-45TA3
- IS65C1024AL-45QLA3-TR
- IS65C1024AL-45QLA3
- IS65C1024AL-45QA3
- IS65C1024AL
- IS65C10248AL-55MLA3
- IS65C10248AL-55CTLA3
- IS65C10248AL
- IS659A
- IS657B
- IS657A
- IS655A
- IS654A
- IS64WV6416DBLL-10CTLA3-TR
- IS64WV6416DBLL-10CTLA3
- IS64WV6416BLL-15TLA3-TR
- IS64WV6416BLL-15TLA3/U802D
- IS64WV6416BLL-15TLA3
- IS64WV6416BLL-15TA3-TR
- IS64WV6416BLL-15TA3
- IS64WV6416BLL-15BLA3-TR
- IS64WV6416BLL-15BLA3
- IS64WV6416BLL-15BA3TR/U975A
- IS64WV6416BLL-15BA3-TR
- IS64WV6416BLL-15BA3
- IS64WV6416BLL
- IS64WV5128EDBLL-10KLA1
- IS64WV5128EDBLL-10CTLA3
- IS64WV5128EDBLL-10BLA3
- IS64WV5128BLL-10CTLA3-TR
- IS64WV5128BLL-10CTLA3
- IS64WV51232BLL-10BA3
- IS64WV51216EDBLL-10CTLA3-TR
- IS627
- IS623
- IS622
- IS621
- IS620
- IS61C67
- IS611X
- IS611
- IS610X
- IS610
- IS609
- IS608X
- IS608
- IS607X
- IS607
- IS6051
- IS604X
- IS604
- IS6030
- IS6015X
IS65数据表相关新闻
IS63WV1024BLL-12TLI
IS63WV1024BLL-12TLI, TSOP, ISSI, 22+
2023-3-9IS64LV51216-12TLA3
进口代理
2022-8-15IS82C55AZ 原装现货
IS82C55AZ 可做含税，支持实单
2021-9-22IS63LV1024L-12JL进口原装深圳现货
进口原装，国产代理，海量库存，产品齐全，货源渠道百分百正品
2020-6-19IS916EN
IS916EN 深圳市拓亿芯电子有限公司，本公司具备一般纳税人，可开16点增值税票， 货源渠道保证原厂原装正品IC，诚信为本，薄利多销。
2019-3-6IS9-1715ARH-8-抗辐射互补开关FET驱动器
抗辐射互补开关FET驱动器 辐射硬化的IS -1715ARH是一种高速，高当前互补功率FET设计中使用的驱动程序同步整流电路。软开关转换两个输出波形可通过设置管理独立的可编程延迟。延迟引脚可以通过配置零电压传感，让精确的开关控制。的IS -1715ARH有一个输入，这是PWM和TTL兼容，并能运行频率高达1MHz。该辅助输出开关立即在上升沿输入，但之前等待响应延迟为T2的下降沿。一个逻辑低使能引脚（ENBL）的地方俱进低有效输出模式，并根据电压的锁定（UVLO）功能功能设定在9伏（最大）。与Intersil的人工介质隔离抗辐射硅栅（体操）过程中，这些设备是免疫单粒子闭锁（SEL
2013-3-1
DdatasheetPDF页码索引
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