位置：首页 > IC中文资料第3989页 > IS65
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa | ISSI 矽成半导体 |   | ||
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa | ISSI 矽成半导体 | | ||
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa | ISSI 矽成半导体 | | ||
128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. | ISSI 矽成半导体 | | ||
128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl | ISSI 矽成半导体 | | ||
128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. | ISSI 矽成半导体 | | ||
128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl | ISSI 矽成半导体 | | ||
128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. | ISSI 矽成半导体 | | ||
128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl | ISSI 矽成半导体 | | ||
256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C TTL compatible interface levels Single 5V ± 10 % power supply Package : 44-pin TSOP (Type II) Three state outputs Com | ISSI 矽成半导体 | | ||
32K x 8 LOW POWER CMOS STATIC RAM FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa | ISSI 矽成半导体 | | ||
32K x 8 LOW POWER CMOS STATIC RAM FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa | ISSI 矽成半导体 | | ||
32K x 8 LOW POWER CMOS STATIC RAM FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa | ISSI 矽成半导体 | | ||
32K x 8 LOW POWER CMOS STATIC RAM FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa | ISSI 矽成半导体 | | ||
32K x 8 LOW POWER CMOS STATIC RAM FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa | ISSI 矽成半导体 | | ||
32K x 8 LOW POWER CMOS STATIC RAM FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa | ISSI 矽成半导体 | | ||
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low | ISSI 矽成半导体 | | ||
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Fully static operation: no clock or refresh required • Three state outputs • Dat | ISSI 矽成半导体 | | ||
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low | ISSI 矽成半导体 | | ||
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Fully static operation: no clock or refresh required • Three state outputs • Dat | ISSI 矽成半导体 | | ||
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low | ISSI 矽成半导体 | | ||
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Fully static operation: no clock or refresh required • Three state outputs • Dat | ISSI 矽成半导体 | | ||
512Kx8 HIGH SPEED, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C TTL compatible interface levels Single 5V ± 10 % power supply Three state outputs Industrial and Automotive temperature | ISSI 矽成半导体 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When | ISSI 矽成半导体 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 20, 45 ns • Automatic power-down when chip is deselected • CMOS low power operation — 17 μW (typical) CMOS standby — 50 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ | ISSI 矽成半导体 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When | ISSI 矽成半导体 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When | ISSI 矽成半导体 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 20, 45 ns • Automatic power-down when chip is deselected • CMOS low power operation — 17 μW (typical) CMOS standby — 50 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ | ISSI 矽成半导体 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When | ISSI 矽成半导体 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When | ISSI 矽成半导体 | | ||
32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 20, 45 ns • Automatic power-down when chip is deselected • CMOS low power operation — 17 μW (typical) CMOS standby — 50 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat | ISSI 矽成半导体 | | ||
1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V) TTL compatible interface levels Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd | ISSI 矽成半导体 | | ||
1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V) TTL compatible interface levels Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd | ISSI 矽成半导体 | | ||
1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V) TTL compatible interface levels Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd | ISSI 矽成半导体 | | ||
1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V) TTL compatible interface levels Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd | ISSI 矽成半导体 | | ||
1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V) TTL compatible interface levels Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd | ISSI 矽成半导体 | | ||
1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 μW (1.8V), 90 μW (3.0V) TTL compatible interface levels Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vd | ISSI 矽成半导体 | | ||
1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV102416FALL) – 2.2V-3.6V VDD (IS62/65WV102416FBLL) Three state | ISSI 矽成半导体 | | ||
1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV102416FALL) – 2.2V-3.6V VDD (IS62/65WV102416FBLL) Three state | ISSI 矽成半导体 | | ||
1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV102416FALL) – 2.2V-3.6V VDD (IS62/65WV102416FBLL) Three state | ISSI 矽成半导体 | | ||
1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV102416FALL) – 2.2V-3.6V VDD (IS62/65WV102416FBLL) Three state | ISSI 矽成半导体 | | ||
1024Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV102416GALL) – 2.2V-3.6V VDD (IS62/65WV102416GBLL) • Three state | ISSI 矽成半导体 | | ||
1024Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV102416GALL) – 2.2V-3.6V VDD (IS62/65WV102416GBLL) • Three state | ISSI 矽成半导体 | | ||
1024Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV102416GALL) – 2.2V-3.6V VDD (IS62/65WV102416GBLL) • Three state | ISSI 矽成半导体 | | ||
1024Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV102416GALL) – 2.2V-3.6V VDD (IS62/65WV102416GBLL) • Three state | ISSI 矽成半导体 | | ||
1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – 36 mW (typical) operating TTL compatible interface levels Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL) Automotive temperature (-40oC to +125oC) Lead-free availab | ISSI 矽成半导体 | | ||
1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – 36 mW (typical) operating TTL compatible interface levels Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL) Automotive temperature (-40oC to +125oC) Lead-free availab | ISSI 矽成半导体 | | ||
1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – 36 mW (typical) operating TTL compatible interface levels Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL) Automotive temperature (-40oC to +125oC) Lead-free availab | ISSI 矽成半导体 | | ||
1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL) Optional ERR | ISSI 矽成半导体 | | ||
1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL) Optional ERR | ISSI 矽成半导体 | | ||
1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL) Optional ERR | ISSI 矽成半导体 | | ||
1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL) Optional ERR | ISSI 矽成半导体 | | ||
1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL) Optional ERR | ISSI 矽成半导体 | | ||
1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL) Optional ERR | ISSI 矽成半导体 | | ||
1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV10248EFALL) – 2.2V-3.6V VDD (IS62/65WV10248EFBLL) Optional ERR | ISSI 矽成半导体 | |
IS65产品属性
- 类型
描述
- 型号
IS65
- 制造商
IDEC Corporation
- 功能描述
SENS.IND. 10-30VDC PNP NC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI(美国芯成) |
2021+ |
SOP-32 |
499 |
||||
ISSI Integrated Silicon Soluti |
22+ |
32SOP |
9000 |
原厂渠道,现货配单 |
|||
ISSI(美国芯成) |
24+ |
SOP3211.3mm |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ISSI |
23+ |
TSOP44 |
4850 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ISSI |
23+ |
BGA |
4500 |
ISSI存储芯片在售 |
|||
ISSI(美国芯成) |
2447 |
SOP-32 |
315000 |
84个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
ISSI, |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ISSI, Integrated Silicon Solu |
23+ |
32-SOP |
7300 |
专注配单,只做原装进口现货 |
|||
ISSI |
23+ |
32-SOP |
9550 |
专业分销产品!原装正品!价格优势! |
|||
ISSI |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
IS65规格书下载地址
IS65参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IS80C32
- IS80C31
- IS733H
- IS733
- IS725X
- IS725
- IS70-48
- IS70-24
- IS70-15
- IS70-12
- IS7000
- IS-70
- IS662X
- IS662
- IS661X
- IS661
- IS660X
- IS660
- IS65C256AL-25TA3
- IS65C256AL_12
- IS65C256AL
- IS65C256-20UA2-TR
- IS65C256
- IS65C1024AL-45TLA3-TR
- IS65C1024AL-45TLA3
- IS65C1024AL-45TA3
- IS65C1024AL-45QLA3-TR
- IS65C1024AL-45QLA3
- IS65C1024AL-45QA3
- IS65C1024AL
- IS65C10248AL-55MLA3
- IS65C10248AL-55CTLA3
- IS65C10248AL
- IS659A
- IS657B
- IS657A
- IS655A
- IS654A
- IS64WV6416DBLL-10CTLA3-TR
- IS64WV6416DBLL-10CTLA3
- IS64WV6416BLL-15TLA3-TR
- IS64WV6416BLL-15TLA3/U802D
- IS64WV6416BLL-15TLA3
- IS64WV6416BLL-15TA3-TR
- IS64WV6416BLL-15TA3
- IS64WV6416BLL-15BLA3-TR
- IS64WV6416BLL-15BLA3
- IS64WV6416BLL-15BA3TR/U975A
- IS64WV6416BLL-15BA3-TR
- IS64WV6416BLL-15BA3
- IS64WV6416BLL
- IS64WV5128EDBLL-10KLA1
- IS64WV5128EDBLL-10CTLA3
- IS64WV5128EDBLL-10BLA3
- IS64WV5128BLL-10CTLA3-TR
- IS64WV5128BLL-10CTLA3
- IS64WV51232BLL-10BA3
- IS64WV51216EDBLL-10CTLA3-TR
- IS627
- IS623
- IS622
- IS621
- IS620
- IS61C67
- IS611X
- IS611
- IS610X
- IS610
- IS609
- IS608X
- IS608
- IS607X
- IS607
- IS6051
- IS604X
- IS604
- IS6030
- IS6015X
IS65数据表相关新闻
IS63WV1024BLL-12TLI
IS63WV1024BLL-12TLI, TSOP, ISSI, 22+
2023-3-9IS64LV51216-12TLA3
进口代理
2022-8-15IS82C55AZ 原装现货
IS82C55AZ 可做含税，支持实单
2021-9-22IS63LV1024L-12JL进口原装深圳现货
进口原装，国产代理，海量库存，产品齐全，货源渠道百分百正品
2020-6-19IS916EN
IS916EN 深圳市拓亿芯电子有限公司，本公司具备一般纳税人，可开16点增值税票， 货源渠道保证原厂原装正品IC，诚信为本，薄利多销。
2019-3-6IS9-1715ARH-8-抗辐射互补开关FET驱动器
抗辐射互补开关FET驱动器 辐射硬化的IS -1715ARH是一种高速，高当前互补功率FET设计中使用的驱动程序同步整流电路。软开关转换两个输出波形可通过设置管理独立的可编程延迟。延迟引脚可以通过配置零电压传感，让精确的开关控制。的IS -1715ARH有一个输入，这是PWM和TTL兼容，并能运行频率高达1MHz。该辅助输出开关立即在上升沿输入，但之前等待响应延迟为T2的下降沿。一个逻辑低使能引脚（ENBL）的地方俱进低有效输出模式，并根据电压的锁定（UVLO）功能功能设定在9伏（最大）。与Intersil的人工介质隔离抗辐射硅栅（体操）过程中，这些设备是免疫单粒子闭锁（SEL
2013-3-1
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
