IS64VPS12836EC参数引脚图现货行情报价ISSI-IC资料网

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型号	功能描述	生产厂家企业	LOGO
IS64VPS12836EC	Synchronous SRAM	ISSI 矽成半导体	ISSI
IS64VPS12836EC-200B2A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS64VPS12836EC-200B2I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS64VPS12836EC-200B3A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS64VPS12836EC-200B3I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS64VPS12836EC-200TQA3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS64VPS12836EC-200TQI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS64VPS12836EC-250B2A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS64VPS12836EC-250B2I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS64VPS12836EC-250B3A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS64VPS12836EC-250B3I	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS64VPS12836EC-250TQA3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS64VPS12836EC-250TQI	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an	ISSI 矽成半导体	ISSI
IS64VPS12836EC-200B2A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS64VPS12836EC-200B2LA3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS64VPS12836EC-200B3A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS64VPS12836EC-200B3LA3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS64VPS12836EC-200TQA3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS64VPS12836EC-200TQLA3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS64VPS12836EC-250B2A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS64VPS12836EC-250B2LA3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS64VPS12836EC-250B3A3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS64VPS12836EC-250B3LA3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS64VPS12836EC-250TQA3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS64VPS12836EC-250TQLA3	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM 文件：2.32368 Mbytes Page：36 Pages	ISSI 矽成半导体	ISSI
IS64VPS12836A	128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSIIS61(64)LPS12832A, IS61(64)LPS/VPS12836A and IS61(64)LPS/VPS25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performancememory for communication and networking applications. The IS61(64)LPS12832A is organized as 131,072 words by 32 b	ISSI 矽成半导体	ISSI

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更新时间：2025-12-12 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	IS64WV102416BLL-10CTLA3	ISSI(美国芯成)	24+	TSOP4812.0mm	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市科恒伟业电子有限公司	IS64WV102416BLL-10CTLA3	ISSI/芯成	2450+	TSOP48	9850	只做原厂原装正品现货或订货假一赔十!	询价
讯运(深圳/上海)电子有限公司	IS64WV102416BLL-10CTLA3-TR	ISSI(美国芯成)	2021+	TSOPI-48	499		询价
千层芯半导体(深圳)有限公司	IS64WV102416BLL-10CTLA3	ISSI	24+	SMD	15600	静态随机存取存储器16M(1Mx16)10nsAsync静态随机存取	询价
深圳市诺美思科技有限公司	IS64WV102416BLL-10CTLA3	ISSI		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市星辰微电科技有限公司	IS64WV102416BLL	ISSI	23+	BGA	4500	ISSI存储芯片在售	询价
深圳市冠亿通科技有限公司	IS64WV102416BLL-10CTLA3	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市卓越微芯电子有限公司	IS64VPS204836B-166M3LA3	ISSI	25+	PBGA(165)	3850	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市中联芯电子有限公司	IS64WV102416BLL-10CTLA3	ISSI	24+	TSOP48	9000	只做原装正品有挂有货假一赔十	询价
深圳市河锋鑫科技有限公司	IS64WV102416BLL10CTLA3	ISSI Integrated Silicon Soluti	22+	48TSOP I	9000	原厂渠道,现货配单	询价

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IS63WV1024BLL-12TLI
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IS82C55AZ 原装现货
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IS63LV1024L-12JL进口原装深圳现货
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IS916EN
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IS9-1715ARH-8-抗辐射互补开关FET驱动器
抗辐射互补开关FET驱动器辐射硬化的IS -1715ARH是一种高速，高当前互补功率FET设计中使用的驱动程序同步整流电路。软开关转换两个输出波形可通过设置管理独立的可编程延迟。延迟引脚可以通过配置零电压传感，让精确的开关控制。的IS -1715ARH有一个输入，这是PWM和TTL兼容，并能运行频率高达1MHz。该辅助输出开关立即在上升沿输入，但之前等待响应延迟为T2的下降沿。一个逻辑低使能引脚（ENBL）的地方俱进低有效输出模式，并根据电压的锁定（UVLO）功能功能设定在9伏（最大）。与Intersil的人工介质隔离抗辐射硅栅（体操）过程中，这些设备是免疫单粒子闭锁（SEL
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IS64VPS12836EC供应商更多...

IS64VPS12836EC芯片相关品牌

IS64VPS12836EC规格书下载地址

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IS63WV1024BLL-12TLI

IS64LV51216-12TLA3

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IS916EN

IS9-1715ARH-8-抗辐射互补开关FET驱动器

DdatasheetPDF页码索引