IS62WV6416BLL价格

参考价格:¥31.4359

型号:IS62WV6416BLL-45BI 品牌:ISSI 备注:这里有IS62WV6416BLL多少钱,2025年最近7天走势,今日出价,今日竞价,IS62WV6416BLL批发/采购报价,IS62WV6416BLL行情走势销售排行榜,IS62WV6416BLL报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IS62WV6416BLL

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 1MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:托盘 描述:IC SRAM 1MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

High-speed access time: 35ns, 45ns, 55ns

文件:385.78 Kbytes Page:15 Pages

ISSI

北京矽成

High-speed access time: 35ns, 45ns, 55ns

文件:385.78 Kbytes Page:15 Pages

ISSI

北京矽成

IS62WV6416BLL产品属性

  • 类型

    描述

  • 型号

    IS62WV6416BLL

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

更新时间:2025-8-16 11:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
20+
TSOP44
979
原装
ISSI
20+
TSOP
35830
原装优势主营型号-可开原型号增税票
ISSI(美国芯成)
2447
miniBGA-48(6x8)
315000
480个/托盘一级代理专营品牌!原装正品,优势现货,长
ISSI,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ISSI
1923+
TSOP
9865
原装进口现货库存专业工厂研究所配单供货
ISSI, Integrated Silicon Solu
23+
44-TSOP II
7300
专注配单,只做原装进口现货
ISSI
23+
TSOP44
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
ISSI
25+
NA
880000
明嘉莱只做原装正品现货
ISSI
24+
TSOP
6000
全新原装,一手货源,全场热卖!
ISSI
25+
mBGA-48
16000
原装优势绝对有货

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