IS62WV6416BLL价格

参考价格:¥31.4359

型号:IS62WV6416BLL-45BI 品牌:ISSI 备注:这里有IS62WV6416BLL多少钱,2025年最近7天走势,今日出价,今日竞价,IS62WV6416BLL批发/采购报价,IS62WV6416BLL行情走势销售排行榜,IS62WV6416BLL报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IS62WV6416BLL

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 1MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:托盘 描述:IC SRAM 1MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

High-speed access time: 35ns, 45ns, 55ns

文件:385.78 Kbytes Page:15 Pages

ISSI

北京矽成

High-speed access time: 35ns, 45ns, 55ns

文件:385.78 Kbytes Page:15 Pages

ISSI

北京矽成

IS62WV6416BLL产品属性

  • 类型

    描述

  • 型号

    IS62WV6416BLL

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

更新时间:2025-8-15 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
NA/
4749
原装现货,当天可交货,原型号开票
ISSI(美国芯成)
24+
TSOPII44
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ISSI
2016+
TSOP
3000
只做原装,假一罚十,公司可开17%增值税发票!
ISSI
09+
TSOP44
2600
全新原装进口自己库存优势
ISSI
25+
原厂原封可拆样
65248
百分百原装现货 实单必成
ISSI
24+
TSOP44
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ISSI
07+
TSOP
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI
20+
TSOP
35830
原装优势主营型号-可开原型号增税票
ISSI
21+
TSOP44
10000
原装现货假一罚十
ISSI
24+
TSOP
5000
专营ISSI进口原装现货可开17增值税票

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