型号 功能描述 生产厂家&企业 LOGO 操作
IS62WV6416ALL-55B

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 1MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 1MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low po

ISSI

北京矽成

IS62WV6416ALL-55B产品属性

  • 类型

    描述

  • 型号

    IS62WV6416ALL-55B

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

更新时间:2025-8-18 9:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ISSI, Integrated Silicon Solut
21+
144-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
ISSI Integrated Silicon Solut
25+
48-TFBGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ISSI, Integrated Silicon Solut
24+
48-迷你型BGA(6x8)
56200
一级代理/放心采购
ISSI
23+
BGA48
7000
ISSI(美国芯成)
2021+
miniBGA-48(6x8)
499
ISSI
21+
BGA48
10000
原装现货假一罚十
ISSI
2223+
BGA48
26800
只做原装正品假一赔十为客户做到零风险
ISSI
25+
原厂原装
16000
原装优势绝对有货
ISSI(美国芯成)
24+
TFBGA48(6x8)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!

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