256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

封装/外壳：36-TFBGA 包装：托盘 描述：IC SRAM 2MBIT PARALLEL 36TFBGA 集成电路（IC） 存储器

封装/外壳：32-TFSOP（0.465"，11.80mm 宽） 包装：托盘 描述：IC SRAM 2MBIT PARALLEL 32STSOP I 集成电路（IC） 存储器