型号 功能描述 生产厂家 企业 LOGO 操作

256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV25616EALL) – 2.2V-3.6V VDD (IS62/65WV25616EB

ISSI

矽成半导体

256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV25616EALL) – 2.2V-3.6V VDD (IS62/65WV25616EB

ISSI

矽成半导体

256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV25616EALL) – 2.2V-3.6V VDD (IS62/65WV25616EB

ISSI

矽成半导体

256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV25616EALL) – 2.2V-3.6V VDD (IS62/65WV25616EB

ISSI

矽成半导体

256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV25616EALL) – 2.2V-3.6V VDD (IS62/65WV25616EB

ISSI

矽成半导体

256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV25616EALL) – 2.2V-3.6V VDD (IS62/65WV25616EB

ISSI

矽成半导体

封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC SRAM 4MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

更新时间:2025-12-16 15:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
23+
BGA48
3500
原厂原装正品
ISSI(美国芯成)
2447
miniBGA-48(6x8)
315000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
ISSI Integrated Silicon Soluti
22+
48TFBGA (6x8)
9000
原厂渠道,现货配单
ISSI, Integrated Silicon Solut
24+
48-TFBGA(6x8)
56200
一级代理/放心采购
ISSI
24+
BGA48
9000
只做原装正品 有挂有货 假一赔十
ISSI,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ISSI
21+
TSOP44
1975
ISSI Integrated Silicon Solut
25+
48-TFBGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ISSI(美国芯成)
2021+
miniBGA-48(6x8)
499
ISSI
1653+
BGA48
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力

IS62WV25616EBLL-4芯片相关品牌

IS62WV25616EBLL-4数据表相关新闻