IS62WV1288BLL价格

参考价格:¥7.6690

型号:IS62WV1288BLL-55HLI 品牌:ISSI 备注:这里有IS62WV1288BLL多少钱,2025年最近7天走势,今日出价,今日竞价,IS62WV1288BLL批发/采购报价,IS62WV1288BLL行情走势销售排行榜,IS62WV1288BLL报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IS62WV1288BLL

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

北京矽成

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

北京矽成

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

北京矽成

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

北京矽成

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

北京矽成

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

北京矽成

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

北京矽成

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

北京矽成

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

北京矽成

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

北京矽成

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

北京矽成

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

北京矽成

封装/外壳:32-TFSOP(0.465",11.80mm 宽) 包装:托盘 描述:IC SRAM 1MBIT PARALLEL 32STSOP I 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:32-TFSOP(0.465",11.80mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC SRAM 1MBIT PARALLEL 32STSOP I 集成电路(IC) 存储器

ETC

知名厂家

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

北京矽成

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

文件:468.39 Kbytes Page:16 Pages

ISSI

北京矽成

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

文件:468.39 Kbytes Page:16 Pages

ISSI

北京矽成

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

文件:468.39 Kbytes Page:16 Pages

ISSI

北京矽成

IS62WV1288BLL产品属性

  • 类型

    描述

  • 型号

    IS62WV1288BLL

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

更新时间:2025-8-18 12:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
TSSOP
20000
原厂原装,正品现货,假一罚十
TLI
08+
TSSOP
27
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI
2025+
SOP32
3615
全新原厂原装产品、公司现货销售
ISSI
2009
TSOP
2674
厂家指定一级分销全新原装现货价
ISSI
2016+
SSOP
6523
只做原装正品现货!或订货!
TLI
24+
NA/
3277
原装现货,当天可交货,原型号开票
ISSI
24+
TSOP
2650
原装优势!绝对公司现货
ISSI
21+
10560
十年专营,原装现货,假一赔十
ISSI
22+
TSOP-32
12245
现货,原厂原装假一罚十!
ISSI
23+
TSOP
89630
当天发货全新原装现货

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