型号 功能描述 生产厂家 企业 LOGO 操作
IS62LV256AL-20TL

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

ISSI

矽成半导体

封装/外壳:28-TSSOP(0.465",11.80mm 宽) 包装:卷带(TR) 描述:IC SRAM 256KBIT PAR 28TSOP I 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:28-TSSOP(0.465",11.80mm 宽) 包装:卷带(TR) 描述:IC SRAM 256KBIT PAR 28TSOP I 集成电路(IC) 存储器

ETC

知名厂家

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

ISSI

矽成半导体

IS62LV256AL-20TL产品属性

  • 类型

    描述

  • 型号

    IS62LV256AL-20TL

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    32K x 8 LOW VOLTAGE CMOS STATIC RAM

更新时间:2025-11-2 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI,
25+
25000
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315000
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10
ISSI
24+
con
10
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ISSI(美国芯成)
25+
TSOPI-28-8.0mm
500000
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ISSI
24+
SMD
15600
静态随机存取存储器256K(32Kx8)20nsAsync静态随机存取
ISSI
25+
TSOP28
3850
百分百原装正品 真实公司现货库存 本公司只做原装 可
ISSI
1824+
TSOP
3910
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TSOP28
4831
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ISSI
23+
TSOP28
50000
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