32K x 8 LOW VOLTAGE STATIC RAM

DESCRIPTION The ISSI IS62LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS double-metal technology. FEATURES • Access time: 45, 70 ns • Low active power: 70 mW • Low standby power — 45 µW CMOS standby • Fully stati

32K x 8 LOW VOLTAGE STATIC RAM

DESCRIPTION The ISSI IS62LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS double-metal technology. FEATURES • Access time: 45, 70 ns • Low active power: 70 mW • Low standby power — 45 µW CMOS standby • Fully stati

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION The ICSI IC62LV256 is a low power, 32, 768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS double-metal technology. FEATURES • Access time: 45, 70, 100 ns • Low active power: 70 mW • Low standby power — 60 µW CMOS standby • Fully static operation

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION The ICSI IC62LV256 is a low power, 32, 768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS double-metal technology. FEATURES • Access time: 45, 70, 100 ns • Low active power: 70 mW • Low standby power — 60 µW CMOS standby • Fully static operation

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION The ICSI IC62LV256 is a low power, 32, 768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS double-metal technology. FEATURES • Access time: 45, 70, 100 ns • Low active power: 70 mW • Low standby power — 60 µW CMOS standby • Fully static operation

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION The ICSI IC62LV256 is a low power, 32, 768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS double-metal technology. FEATURES • Access time: 45, 70, 100 ns • Low active power: 70 mW • Low standby power — 60 µW CMOS standby • Fully static operation

32K x 8 Low Power SRAM with 3.3V

DESCRIPTION The ICSI IC62LV256 is a low power, 32, 768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS double-metal technology. FEATURES • Access time: 45, 70, 100 ns • Low active power: 70 mW • Low standby power — 60 µW CMOS standby • Fully static operation