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型号	功能描述	生产厂家企业	LOGO
IS62LV12816L	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816L	ASYNCHRONOUS STATIC RAM, Low Power A.SRAM	ISSI 矽成半导体	ISSI
IS62LV12816L-100B	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816L-100BI	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816L-100T	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816L-100TI	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816L-55B	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816L-55BI	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816L-55T	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816L-55TI	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816L-70B	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816L-70BI	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816L-70T	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816L-70TI	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816LL	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816LL-100B	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816LL-100BI	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816LL-100T	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816LL-100TI	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816LL-55B	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816LL-55BI	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816LL-55T	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816LL-55TI	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816LL-70B	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816LL-70BI	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816LL-70T	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816LL-70TI	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc	ICSI	ICSI
IS62LV12816L-100B	128K x 16 CMOS STATIC RAM 文件：83.15 Kbytes Page：9 Pages	ISSI 矽成半导体	ISSI
IS62LV12816L-100BI	128K x 16 CMOS STATIC RAM 文件：83.15 Kbytes Page：9 Pages	ISSI 矽成半导体	ISSI
IS62LV12816L-100T	128K x 16 CMOS STATIC RAM 文件：83.15 Kbytes Page：9 Pages	ISSI 矽成半导体	ISSI
IS62LV12816L-100TI	128K x 16 CMOS STATIC RAM 文件：83.15 Kbytes Page：9 Pages	ISSI 矽成半导体	ISSI
IS62LV12816L-120B	128K x 16 CMOS STATIC RAM 文件：83.15 Kbytes Page：9 Pages	ISSI 矽成半导体	ISSI
IS62LV12816L-120BI	128K x 16 CMOS STATIC RAM 文件：83.15 Kbytes Page：9 Pages	ISSI 矽成半导体	ISSI
IS62LV12816L-120T	128K x 16 CMOS STATIC RAM 文件：83.15 Kbytes Page：9 Pages	ISSI 矽成半导体	ISSI
IS62LV12816L-120TI	128K x 16 CMOS STATIC RAM 文件：83.15 Kbytes Page：9 Pages	ISSI 矽成半导体	ISSI
IS62LV12816L-70B	128K x 16 CMOS STATIC RAM 文件：83.15 Kbytes Page：9 Pages	ISSI 矽成半导体	ISSI
IS62LV12816L-70BI	128K x 16 CMOS STATIC RAM 文件：83.15 Kbytes Page：9 Pages	ISSI 矽成半导体	ISSI
IS62LV12816L-70T	128K x 16 CMOS STATIC RAM 文件：83.15 Kbytes Page：9 Pages	ISSI 矽成半导体	ISSI
IS62LV12816L-70TI	128K x 16 CMOS STATIC RAM 文件：83.15 Kbytes Page：9 Pages	ISSI 矽成半导体	ISSI
IC62LV12816DL	128 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM DESCRIPTION The ICSI IC62LV12816DL and IC62LV12816DLL are lowpower,2,097,152 bit static RAMs organized as 131,072 words by 16 bits. They are fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-perform	ICSI	ICSI
IC62LV12816DLL	128 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM DESCRIPTION The ICSI IC62LV12816DL and IC62LV12816DLL are lowpower,2,097,152 bit static RAMs organized as 131,072 words by 16 bits. They are fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-perform	ICSI	ICSI
62LV12816	128K x 16 CMOS STATIC RAM 文件：83.15 Kbytes Page：9 Pages	ISSI 矽成半导体	ISSI
IC62LV12816L	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：139.94 Kbytes Page：10 Pages	ICSI	ICSI
IC62LV12816LL	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：139.94 Kbytes Page：10 Pages	ICSI	ICSI

IS62LV12816L产品属性

类型
描述
型号
IS62LV12816L
制造商
ICSI
制造商全称
Integrated Circuit Solution Inc
功能描述
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62LV12816L供应商更多...

更新时间：2025-11-2 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	IS62LV12816LL-70T	ISSI	24+	NA/	3343	原装现货,当天可交货,原型号开票	询价
深圳市纳艾斯科技有限公司	IS62LV12816LL-70TI	ICSI	24+	TSOP	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市富利微电子科技有限公司	IS62LV12816LL-70T	ISSI	24+	TSOP44	30000	原装正品公司现货,假一赔十!	询价
深圳市科恒伟业电子有限公司	IS62LV12816LL-70BI	ISSI	2517+	QFN	8850	只做原装正品现货或订货假一赔十!	询价
深圳市星宇佳科技有限公司	IS62LV12816LL-70TI	ICSI	0133+	TSOP	2504		询价
深圳市华斯顿科技有限公司	IS62LV12816LL-70BI	ISSI	25+23+	BGA	22784	绝对原装正品全新进口深圳现货	询价
深圳市胜彬电子有限公司	IS62LV12816LL-70T	ISSI	22+	TSSOP	8000	原装正品支持实单	询价
深圳市恒凯威科技开发有限公司	IS62LV12816LL-70T	ISSI	21+	TSOP44	10000	只做原装,质量保证	询价
标准国际(香港)有限公司	IS62LV12816L-70T	ISSI	25+		3	公司优势库存热卖中!!	询价
深圳市壹芯创科技有限公司	IS62LV12816LL-70TI	ISSI	22+	TQFP	5000	全新原装现货!自家库存!	询价

IS62LV12816L芯片相关品牌

IS62LV12816L规格书下载地址

IS62LV12816L参数引脚图相关

IS62LV12816L数据表相关新闻

IS62WV51216BLL-55TL
IS62WV51216BLL-55TL
2022-7-1
IS62WV12816EBLL-45BLI
IS62WV12816EBLL-45BLI
2021-10-11
IS61SF12832-8.5TQ
产品属性属性值搜索类似制造商: ISSI 产品种类: 静态随机存取存储器存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13
IS61SF12832-8.5TQ
原装正品热卖假一赔十
2020-7-13
IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T
IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T
2020-1-1
IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司：专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30

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IS62LV12816L产品属性

IS62LV12816L供应商更多...

IS62LV12816L芯片相关品牌

IS62LV12816L规格书下载地址

IS62LV12816L参数引脚图相关

IS62LV12816L数据表相关新闻

IS62WV51216BLL-55TL

IS62WV12816EBLL-45BLI

IS61SF12832-8.5TQ

IS61SF12832-8.5TQ

IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T

IS62C256AL-45TLI进口原装假一赔十

DdatasheetPDF页码索引