IS61WV25616EDBLL价格

参考价格:¥16.6157

型号:IS61WV25616EDBLL-10TLI 品牌:ISSI 备注:这里有IS61WV25616EDBLL多少钱,2025年最近7天走势,今日出价,今日竞价,IS61WV25616EDBLL批发/采购报价,IS61WV25616EDBLL行情走势销售排行榜,IS61WV25616EDBLL报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS61WV25616EDBLL

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Da

ISSI

矽成半导体

IS61WV25616EDBLL

Data control for upper and lower bytes

文件:751.83 Kbytes Page:14 Pages

ISSI

矽成半导体

IS61WV25616EDBLL

High Speed Low Power Asynchronous SRAM

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Da

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Da

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Da

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Da

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Da

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

文件:751.82 Kbytes Page:14 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

文件:751.82 Kbytes Page:14 Pages

ISSI

矽成半导体

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 4MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

文件:751.82 Kbytes Page:14 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

文件:751.82 Kbytes Page:14 Pages

ISSI

矽成半导体

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

文件:751.82 Kbytes Page:14 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

文件:751.82 Kbytes Page:14 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

文件:751.82 Kbytes Page:14 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

文件:751.82 Kbytes Page:14 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

文件:751.82 Kbytes Page:14 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64WV25616ALL/BLL) • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS) • High-speed access time: 25, 35, 45 ns • Low Active Power: 35 mW (typical) • Low Sta

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64WV25616ALL/BLL) • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS) • High-speed access time: 25, 35, 45 ns • Low Active Power: 35 mW (typical) • Low Sta

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件:212.36 Kbytes Page:21 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件:212.36 Kbytes Page:21 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件:212.36 Kbytes Page:21 Pages

ISSI

矽成半导体

IS61WV25616EDBLL产品属性

  • 类型

    描述

  • 型号

    IS61WV25616EDBLL

  • 功能描述

    静态随机存取存储器 4Mb 512K x 8 10ns Async 静态随机存取存储器

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-11-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI(美国芯成)
24+
TSOPII44
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ISSI
24+
TSOP44
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ISSI
2450+
18
9850
只做原厂原装正品现货或订货假一赔十!
ISSI
20+
BGA
2000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TI
2022+
N/O
6000
全新原装,欢迎询价
ISSI
23+
NA
16546
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
ISSI
24+
TSOP44
8000
原厂原装,价格优势,欢迎洽谈!
ISSI
2136
TSOP44
3446
全新原装公司现货
ISSI(美国芯成)
2526+
TSOP-44
50000
只做原装优势现货库存,渠道可追溯
ISSI
0
*
20

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