位置:首页 > IC中文资料 > IS61WV25616EDALL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61WV25616EDALL | 256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 20ns Single power supply – 1.65V-2.2V VDD Low Standby Current:1.5mA (typical) Fully static operation: no clock or refresh required Data control Three state outputs Industrial and Automotive temperature support Lead-free available Error | ISSI 矽成半导体 | ||
IS61WV25616EDALL | High Speed Low Power Asynchronous SRAM | ISSI 矽成半导体 | ||
256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 20ns Single power supply – 1.65V-2.2V VDD Low Standby Current:1.5mA (typical) Fully static operation: no clock or refresh required Data control Three state outputs Industrial and Automotive temperature support Lead-free available Error | ISSI 矽成半导体 | |||
256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 20ns Single power supply – 1.65V-2.2V VDD Low Standby Current:1.5mA (typical) Fully static operation: no clock or refresh required Data control Three state outputs Industrial and Automotive temperature support Lead-free available Error | ISSI 矽成半导体 | |||
封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 4MBIT PARALLEL 48TFBGA 集成电路(IC) 存储器 | ETC 知名厂家 | ETC | ||
封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC SRAM 4MBIT PARALLEL 48TFBGA 集成电路(IC) 存储器 | ETC 知名厂家 | ETC | ||
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64WV25616ALL/BLL) • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS) • High-speed access time: 25, 35, 45 ns • Low Active Power: 35 mW (typical) • Low Sta | ISSI 矽成半导体 | |||
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64WV25616ALL/BLL) • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS) • High-speed access time: 25, 35, 45 ns • Low Active Power: 35 mW (typical) • Low Sta | ISSI 矽成半导体 | |||
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM 文件:212.36 Kbytes Page:21 Pages | ISSI 矽成半导体 | |||
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM 文件:212.36 Kbytes Page:21 Pages | ISSI 矽成半导体 | |||
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM 文件:212.36 Kbytes Page:21 Pages | ISSI 矽成半导体 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI(美国芯成) |
24+ |
TFBGA48(6x8) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
BGA |
24+ |
NA/ |
165 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ISSI |
2139+ |
None |
500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI |
25+ |
BGA48 |
960 |
原厂原装,价格优势 |
|||
ISSI, Integrated Silicon Solut |
21+ |
24-TBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
ISSI(美国芯成) |
2021+ |
TFBGA-48(6x8) |
499 |
||||
ISSI, |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ISSI |
24+ |
BGA48 |
12000 |
专营ISSI进口原装正品假一赔十可開17增值稅票 |
|||
ISSI |
2022+ |
480 |
6600 |
只做原装,假一罚十,长期供货。 |
|||
ISSI |
23+ |
BGA |
4500 |
ISSI存储芯片在售 |
IS61WV25616EDALL芯片相关品牌
IS61WV25616EDALL规格书下载地址
IS61WV25616EDALL参数引脚图相关
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- IS61WV25616EFALL-10T2LI
- IS61WV25616EFALL-10BLI
- IS61WV25616EFALL-10B5LI
- IS61WV25616EFALL-10B4LI
- IS61WV25616EFALL-10B3LI
- IS61WV25616EFALL-10B2LI
- IS61WV25616EFALL
- IS61WV25616EDBLL-8TLI
- IS61WV25616EDBLL-8TI
- IS61WV25616EDBLL-8BLI
- IS61WV25616EDBLL-8BI
- IS61WV25616EDBLL-10TLI-TR
- IS61WV25616EDBLL-10TLI
- IS61WV25616EDBLL-10TI
- IS61WV25616EDBLL-10BLI
- IS61WV25616EDBLL-10BI
- IS61WV25616EDBLL_V01
- IS61WV25616EDBLL
- IS61WV25616EDALL-20TLI
- IS61WV25616EDALL-20BLI
- IS61WV25616BLS-25TLI
- IS61WV25616BLS
- IS61WV25616BLLSLASHBLS
- IS61WV25616BLL-10TLI
- IS61WV25616BLL-10TL
- IS61WV25616BLL-10TI
- IS61WV25616BLL-10KLI
- IS61WV25616BLL-10BLI
- IS61WV25616BLL-10BI
- IS61WV25616BLL/BLS
- IS61WV25616BLL
- IS61WV25616ALS-45TLI
- IS61WV25616ALS
- IS61WV25616ALLSLASHALS
- IS61WV25616ALL-20TLI
- IS61WV25616ALL-20TI
- IS61WV25616ALL-20BI
- IS61WV25616ALL_V01
- IS61WV25616ALL/ALS
- IS61WV25616ALL
- IS61C67
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IS61WV25616EDALL数据表相关新闻
IS62WV51216BLL-55TL
IS62WV51216BLL-55TL
2022-7-1IS62WV12816EBLL-45BLI
IS62WV12816EBLL-45BLI
2021-10-11IS61SF12832-8.5TQ
产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS61LV256AH-15JI,IS61LV256AH-10T,IS61LV256AH-10TI,IS61LV256AH-12J,IS61LV2568L-12TI,IS61LV2568L-10TLI,IS61LV2568L-10K,IS61LV2568-12T,IS61LV2568-12K,IS61LV2568-15T
IS61LV256AH-15JI,IS61LV256AH-10T,IS61LV256AH-10TI,IS61LV256AH-12J,IS61LV2568L-12TI,IS61LV2568L-10TLI,IS61LV2568L-10K,IS61LV2568-12T,IS61LV2568-12K,IS61LV2568-15T
2020-1-1IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳)有限公司: 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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