型号 功能描述 生产厂家 企业 LOGO 操作
IS61WV25616EDALL

256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 20ns  Single power supply – 1.65V-2.2V VDD  Low Standby Current:1.5mA (typical)  Fully static operation: no clock or refresh required  Data control  Three state outputs  Industrial and Automotive temperature support  Lead-free available  Error

ISSI

矽成半导体

IS61WV25616EDALL

High Speed Low Power Asynchronous SRAM

ISSI

矽成半导体

256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 20ns  Single power supply – 1.65V-2.2V VDD  Low Standby Current:1.5mA (typical)  Fully static operation: no clock or refresh required  Data control  Three state outputs  Industrial and Automotive temperature support  Lead-free available  Error

ISSI

矽成半导体

256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 20ns  Single power supply – 1.65V-2.2V VDD  Low Standby Current:1.5mA (typical)  Fully static operation: no clock or refresh required  Data control  Three state outputs  Industrial and Automotive temperature support  Lead-free available  Error

ISSI

矽成半导体

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 4MBIT PARALLEL 48TFBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC SRAM 4MBIT PARALLEL 48TFBGA 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64WV25616ALL/BLL) • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS) • High-speed access time: 25, 35, 45 ns • Low Active Power: 35 mW (typical) • Low Sta

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64WV25616ALL/BLL) • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS) • High-speed access time: 25, 35, 45 ns • Low Active Power: 35 mW (typical) • Low Sta

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件:212.36 Kbytes Page:21 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件:212.36 Kbytes Page:21 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件:212.36 Kbytes Page:21 Pages

ISSI

矽成半导体

更新时间:2025-11-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI(美国芯成)
24+
TFBGA48(6x8)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
BGA
24+
NA/
165
优势代理渠道,原装正品,可全系列订货开增值税票
ISSI
2139+
None
500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI
25+
BGA48
960
原厂原装,价格优势
ISSI, Integrated Silicon Solut
21+
24-TBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
ISSI(美国芯成)
2021+
TFBGA-48(6x8)
499
ISSI,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ISSI
24+
BGA48
12000
专营ISSI进口原装正品假一赔十可開17增值稅票
ISSI
2022+
480
6600
只做原装,假一罚十,长期供货。
ISSI
23+
BGA
4500
ISSI存储芯片在售

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