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IS61WV12816DBLL价格
参考价格：￥22.1206
型号：IS61WV12816DBLL-10BLI 品牌：ISSI 备注：这里有IS61WV12816DBLL多少钱，2025年最近7天走势，今日出价，今日竞价，IS61WV12816DBLL批发/采购报价，IS61WV12816DBLL行情走势销售排行榜，IS61WV12816DBLL报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61WV12816DBLL | 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 北京矽成 |   | |
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 北京矽成 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 北京矽成 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 北京矽成 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 北京矽成 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 北京矽成 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM 文件：201.17 Kbytes Page：21 Pages | ISSI 北京矽成 | | ||
封装/外壳：48-TFBGA 包装：卷带（TR） 描述：IC SRAM 2MBIT PARALLEL 48MINIBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 2MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM 文件：201.17 Kbytes Page：21 Pages | ISSI 北京矽成 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe | ISSI 北京矽成 | | ||
128K x 16 HIGH-SPEED CMOS STATIC RAM 文件：120.26 Kbytes Page：5 Pages | ISSI 北京矽成 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM 文件：201.17 Kbytes Page：21 Pages | ISSI 北京矽成 | | ||
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM 文件：201.17 Kbytes Page：21 Pages | ISSI 北京矽成 | |
IS61WV12816DBLL产品属性
- 类型
描述
- 型号
IS61WV12816DBLL
- 功能描述
静态随机存取存储器 2M(128Kx16) 10ns Async 静态随机存取存储器 3.3v
- RoHS
否
- 制造商
Cypress Semiconductor
- 存储容量
16 Mbit
- 组织
1 M x 16
- 访问时间
55 ns
- 电源电压-最大
3.6 V
- 电源电压-最小
2.2 V
- 最大工作电流
22 uA
- 最大工作温度
+ 85 C
- 最小工作温度
- 40 C
- 安装风格
SMD/SMT
- 封装/箱体
TSOP-48
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
24+ |
NA/ |
4545 |
原装现货,当天可交货,原型号开票 |
|||
ISSI(美国芯成) |
24+ |
TSOPII44 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ISSI |
1010+ |
TSOP44 |
173 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI |
1948+ |
N/A |
18562 |
只做原装正品现货!或订货假一赔十! |
|||
ISSI |
22+ |
TSOP44 |
30000 |
只做原装正品 |
|||
ISSI |
21+ |
BGA48 |
1975 |
||||
ISSI |
2025+ |
TFBGA48 |
3615 |
全新原厂原装产品、公司现货销售 |
|||
ISSI |
23+ |
TSOP44 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ISSI |
1603 |
76 |
|||||
ISSI |
23+ |
TSOP |
15000 |
全新原装现货,假一赔十. |
IS61WV12816DBLL芯片相关品牌
IS61WV12816DBLL规格书下载地址
IS61WV12816DBLL参数引脚图相关
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IS61WV12816DBLL数据表相关新闻
IS62WV51216BLL-55TL
IS62WV51216BLL-55TL
2022-7-1IS62WV12816EBLL-45BLI
IS62WV12816EBLL-45BLI
2021-10-11IS61SF12832-8.5TQ
产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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