IS61WV102416BL价格

参考价格:¥105.7318

型号:IS61WV102416BLL-10MLI 品牌:INTEGRATED 备注:这里有IS61WV102416BL多少钱,2025年最近7天走势,今日出价,今日竞价,IS61WV102416BL批发/采购报价,IS61WV102416BL行情走势销售排行榜,IS61WV102416BL报价。
型号 功能描述 生产厂家 企业 LOGO 操作

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:323.87 Kbytes Page:20 Pages

ISSI

矽成半导体

High Speed Low Power Asynchronous SRAM

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:131.11 Kbytes Page:21 Pages

ISSI

矽成半导体

封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC SRAM 16MBIT PAR 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 16MBIT PAR 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:131.11 Kbytes Page:21 Pages

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:323.87 Kbytes Page:20 Pages

ISSI

矽成半导体

IS61WV102416BL产品属性

  • 类型

    描述

  • 型号

    IS61WV102416BL

  • 功能描述

    静态随机存取存储器 16M(1Mx16) 8ns 3.3V Async 静态随机存取存储器 3.3v

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-12-11 8:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
TSOP
6980
原装现货,可开13%税票
ISSI
17+
.
6200
100%原装正品现货
ISSI
17+
TSOP48
60000
保证进口原装可开17%增值税发票
ISSI
25+
TQFP
20
百分百原装正品 真实公司现货库存 本公司只做原装 可
ISSI/美国芯成半导体有限公司
23+
TSOP48
5000
公司只做原装,可配单
ISSI
24+
TSOP
2000
原装现货假一罚十
MOT
23+
SOP-20
6500
全新原装假一赔十
25+
TSOP48
18000
原厂直接发货进口原装
ISSI
TSSOP48
50000
ISSI
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.

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