位置：首页 > IC中文资料第17页 > IS61NLP51218
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61NLP51218 | 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM DESCRIPTION The 8 Meg NP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for network and communications customers. They are organized as 262,144 words by 32 bits, 262,144 words by 36 bits and 524,288 wor | ISSI 北京矽成 |   | |
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabric | ISSI 北京矽成 | | ||
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabric | ISSI 北京矽成 | | ||
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabric | ISSI 北京矽成 | | ||
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabric | ISSI 北京矽成 | | ||
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabric | ISSI 北京矽成 | | ||
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabric | ISSI 北京矽成 | | ||
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabric | ISSI 北京矽成 | | ||
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabric | ISSI 北京矽成 | | ||
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabric | ISSI 北京矽成 | | ||
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabric | ISSI 北京矽成 | | ||
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabric | ISSI 北京矽成 | | ||
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabric | ISSI 北京矽成 | | ||
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabric | ISSI 北京矽成 | | ||
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM DESCRIPTION The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabric | ISSI 北京矽成 | | ||
封装/外壳：100-LQFP 包装：托盘 描述：IC SRAM 9MBIT PARALLEL 100TQFP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：100-LQFP 包装：托盘 描述：IC SRAM 9MBIT PARALLEL 100LQFP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
IS61NLP51218产品属性
- 类型
描述
- 型号
IS61NLP51218
- 功能描述
静态随机存取存储器 8Mb 512Kx18 200Mhz 3.3v I/O
- RoHS
否
- 制造商
Cypress Semiconductor
- 存储容量
16 Mbit
- 组织
1 M x 16
- 访问时间
55 ns
- 电源电压-最大
3.6 V
- 电源电压-最小
2.2 V
- 最大工作电流
22 uA
- 最大工作温度
+ 85 C
- 最小工作温度
- 40 C
- 安装风格
SMD/SMT
- 封装/箱体
TSOP-48
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
21+ |
BGA |
10000 |
原装现货假一罚十 |
|||
ISSI(美国芯成) |
2021+ |
LQFP-100(14x20) |
499 |
||||
ISSI |
25+ |
TQFP-100 |
16000 |
原装优势绝对有货 |
|||
ISSI |
21+ |
100-LQFP |
282 |
十年信誉,只做原装,有挂就有现货! |
|||
ISSI(美国芯成) |
24+ |
LQFP100(14x20) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ISSI |
23+ |
BGA |
89630 |
当天发货全新原装现货 |
|||
ISSI |
21+ |
100-LQFP |
118 |
原装现货假一赔十 |
|||
ISSI |
1950+ |
100-LQFP |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
ISSI |
24+ |
BGA |
6000 |
全新原装,一手货源,全场热卖! |
|||
ISSI |
24+ |
BGA |
4500 |
原装正品!公司现货!欢迎来电! |
IS61NLP51218芯片相关品牌
IS61NLP51218规格书下载地址
IS61NLP51218参数引脚图相关
- l101
- l100
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- jumper
- jtag接口
- jk触发器
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- isd1420
- IS725
- IS70-48
- IS70-24
- IS70-15
- IS70-12
- IS7000
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- IS661
- IS660X
- IS660
- IS655A
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- IS627
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- IS621
- IS620
- IS61NLP51236-250TQI
- IS61NLP51236-250TQ
- IS61NLP51236-250B3-TR
- IS61NLP51236-250B3I-TR
- IS61NLP51236-250B3I
- IS61NLP51236-250B3
- IS61NLP51236-200TQLI-TR
- IS61NLP51236-200TQLI
- IS61NLP51236-200TQI-TR
- IS61NLP51236-200TQI
- IS61NLP51236-200B3-TR
- IS61NLP51236-200B3LI-TR
- IS61NLP51236-200B3LI
- IS61NLP51236-200B3I-TR
- IS61NLP51236-200B3I
- IS61NLP51236-200B3
- IS61NLP51218A-200TQLI-TR
- IS61NLP51218A-200TQLI
- IS61NLP51218A-200TQI-TR
- IS61NLP51218A-200TQI
- IS61NLP25672-250B1-TR
- IS61NLP25672-250B1I-TR
- IS61NLP25672-250B1I
- IS61NLP25672-250B1
- IS61NLP25672-200B1-TR
- IS61NLP25672-200B1LI-TR
- IS61NLP25672-200B1LI
- IS61NLP25672-200B1I-TR
- IS61NLP25672-200B1I
- IS61NLP25672-200B1
- IS61NLP25636A-200TQLI-TR
- IS61NLP25636A-200TQLI
- IS61NLP25636A-200TQL
- IS61NLP25636A-200TQI-TR
- IS61NLP25636A-200TQI
- IS61NLP25636A-200B3LI-TR
- IS61NLP25636A-200B3LI
- IS61NLP25636A-200B3I-TR
- IS61NLP25636A-200B3I
- IS61NLP25636A-200B2LI-TR
- IS61C67
- IS611X
- IS611
- IS610X
- IS610
- IS609
- IS608X
- IS608
- IS607X
- IS607
- IS6051
- IS604X
- IS604
- IS6030
- IS6015X
- IS6015
- IS6010X
- IS6010
- IS6005X
- IS6005
IS61NLP51218数据表相关新闻
IS61C5128AS-25TLI
进口代理
2022-8-10IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7IS61SF12832-8.5TQ
产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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