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IS61NLF12836价格

参考价格：￥60.1194

型号：IS61NLF12836A-7.5TQLI 品牌：ISS 备注：这里有IS61NLF12836多少钱，2025年最近7天走势，今日出价，今日竞价，IS61NLF12836批发/采购报价，IS61NLF12836行情走势销售排行榜，IS61NLF12836报价。

型号	功能描述	生产厂家企业	LOGO
IS61NLF12836-10TQ	128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM DESCRIPTION The 4 Meg NF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for network and communications customers. They are organized as 131,072 words by 32 bits, 131,072 words by 36 bits and 262,144 wor	ISSI 矽成半导体	ISSI
IS61NLF12836-8.5B	128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM DESCRIPTION The 4 Meg NF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for network and communications customers. They are organized as 131,072 words by 32 bits, 131,072 words by 36 bits and 262,144 wor	ISSI 矽成半导体	ISSI
IS61NLF12836-8.5TQ	128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM DESCRIPTION The 4 Meg NF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for network and communications customers. They are organized as 131,072 words by 32 bits, 131,072 words by 36 bits and 262,144 wor	ISSI 矽成半导体	ISSI
IS61NLF12836A	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric	ISSI 矽成半导体	ISSI
IS61NLF12836A-6.5B2	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric	ISSI 矽成半导体	ISSI
IS61NLF12836A-6.5B2I	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric	ISSI 矽成半导体	ISSI
IS61NLF12836A-6.5B3	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric	ISSI 矽成半导体	ISSI
IS61NLF12836A-6.5B3I	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric	ISSI 矽成半导体	ISSI
IS61NLF12836A-6.5TQ	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric	ISSI 矽成半导体	ISSI
IS61NLF12836A-6.5TQI	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric	ISSI 矽成半导体	ISSI
IS61NLF12836A-7.5B2	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric	ISSI 矽成半导体	ISSI
IS61NLF12836A-7.5B2I	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric	ISSI 矽成半导体	ISSI
IS61NLF12836A-7.5B3	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric	ISSI 矽成半导体	ISSI
IS61NLF12836A-7.5B3I	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric	ISSI 矽成半导体	ISSI
IS61NLF12836A-7.5TQ	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric	ISSI 矽成半导体	ISSI
IS61NLF12836A-7.5TQI	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric	ISSI 矽成半导体	ISSI
IS61NLF12836A-7.5TQLI	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric	ISSI 矽成半导体	ISSI
IS61NLF12836A	Synchronous SRAM	ISSI 矽成半导体	ISSI
IS61NLF12836A-7.5TQI-TR	封装/外壳：100-LQFP 包装：托盘描述：IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61NLF12836A-7.5TQLI	封装/外壳：100-LQFP 包装：托盘描述：IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路（IC）存储器	ETC 知名厂家	ETC

IS61NLF12836产品属性

类型
描述
型号
IS61NLF12836
功能描述
静态随机存取存储器 4Mb 128Kx36 7.5ns Sync 静态随机存取存储器 3.3v
RoHS
否
制造商
Cypress Semiconductor
存储容量
16 Mbit
组织
1 M x 16
访问时间
55 ns
电源电压-最大
3.6 V
电源电压-最小
2.2 V
最大工作电流
22 uA
最大工作温度
+ 85 C
最小工作温度
- 40 C
安装风格
SMD/SMT
封装/箱体
TSOP-48
封装
Tray

IS61NLF12836供应商更多...

更新时间：2025-11-6 22:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	IS61NLF12836A-7.5TQLI-TR	ISSI(美国芯成)	24+	TQFP100(14x20)	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市得捷芯城科技有限公司	IS61NLF12836A-7.5TQLI	ISSI	24+	NA/	264	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市威雅利发展有限公司	IS61NLF12836A-7.5TQLI	ISSI	11+	TQFP100	264	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市毅创腾电子科技有限公司	IS61NLF12836A-7.5TQLI	ISSI	23+	100-TQFP(14x20)	36430	专业分销产品!原装正品!价格优势!	询价
深圳市宏捷佳电子科技有限公司	IS61NLF12836A-7.5TQI-TR	ISSI Integrated Silicon Solut	25+	100-LQFP	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市宝芯创电子有限公司	IS61NLF12836A-7.5TQLI	ISSI	11+	TQFP100	26481	原盒托盘现货/288	询价
深圳市拓亿芯电子有限公司	IS61NLF12836A-7.5TQLI	原装ISSI	25+	TQFP100	30000	代理全新原装现货,价格优势	询价
瀚佳科技(深圳)有限公司	IS61NLF12836A-7.5TQI	ISSI, Integrated Silicon Solut	24+	100-TQFP(14x20)	56200	一级代理/放心采购	询价
深圳市冠亿通科技有限公司	IS61NLF12836A-7.5TQLI	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
讯运(深圳/上海)电子有限公司	IS61NLF12836A-7.5TQLI-TR	ISSI(美国芯成)	2021+	TQFP-100(14x20)	499		询价

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IS61NLF12836数据表相关新闻

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产品属性属性值搜索类似制造商: ISSI 产品种类: 静态随机存取存储器存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
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IS61NLF12836价格

IS61NLF12836产品属性

IS61NLF12836供应商更多...

IS61NLF12836芯片相关品牌

IS61NLF12836规格书下载地址

IS61NLF12836参数引脚图相关

IS61NLF12836数据表相关新闻

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS61SF12832-8.5TQ

IS61SF12832-8.5TQ

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

IS62C256AL-45TLI进口原装假一赔十

DdatasheetPDF页码索引