型号 功能描述 生产厂家 企业 LOGO 操作
IS61LV25616-12B

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:94.05 Kbytes Page:11 Pages

ISSI

矽成半导体

IS61LV25616-12B

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:94.44 Kbytes Page:11 Pages

ISSI

矽成半导体

IS61LV25616-12B

256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:461.68 Kbytes Page:10 Pages

ICSI

256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:461.68 Kbytes Page:10 Pages

ICSI

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:94.44 Kbytes Page:11 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:94.05 Kbytes Page:11 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co

ICSI

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co

ICSI

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co

ICSI

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co

ICSI

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co

ICSI

IS61LV25616-12B产品属性

  • 类型

    描述

  • 型号

    IS61LV25616-12B

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

更新时间:2025-9-26 19:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
SOJ44
27
全新原装进口自己库存优势
ISSI
0111+
SOJ44
77
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INTEGRATEDS
23+
原厂封装
9888
专做原装正品,假一罚百!
ISSI
23+
TSSOP44
9231
ISSI
23+
TSOP
5600
绝对全新原装!优势供货渠道!特价!请放心订购!
ISSI
25+
SOJ-44
4650
ISSI
1824+
TSOP
5000
原装现货专业代理,可以代拷程序
ISSI
01+09
10
公司优势库存 热卖中!
ISSI
25+
QFN
18000
原厂直接发货进口原装
ISSI
23+
64740
##公司主营品牌长期供应100%原装现货可含税提供技术

IS61LV25616-12B数据表相关新闻