IS61LV12816L价格

参考价格:¥22.7754

型号:IS61LV12816L-10TL 品牌:ISSI 备注:这里有IS61LV12816L多少钱,2026年最近7天走势,今日出价,今日竞价,IS61LV12816L批发/采购报价,IS61LV12816L行情走势销售排行榜,IS61LV12816L报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS61LV12816L

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi

ICSI

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w

ISSI

矽成半导体

封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC SRAM 2MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

静态随机存取存储器 2Mb 128Kx16 10ns Async 静态随机存取存储器 3.3v

ISSI

矽成半导体

封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC SRAM 2MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

静态随机存取存储器 2Mb 128Kx16 10ns Async 静态随机存取存储器 3.3v

ISSI

矽成半导体

静态随机存取存储器 2Mb 128Kx16 10ns Async 静态随机存取存储器 3.3v

ISSI

矽成半导体

128K x 16 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

ICSI

IS61LV12816L产品属性

  • 类型

    描述

  • 型号

    IS61LV12816L

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

更新时间:2026-1-30 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
23+
TSOP44
56248
全新原厂原装正品现货,可提供技术支持、样品免费!
ISSI
24+
TSOP-44
161685
明嘉莱只做原装正品现货
ISSI, Integrated Silicon Solut
24+ 25+
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
25+
600
公司现货库存
ISSI
23+
TSOP
8500
ISSI
2025+
TSOP
3783
全新原装、公司现货热卖
ISSI
25+
TSOP44
27564
ISSI全新特价IS61LV12816L-10TL即刻询购立享优惠#长期有货
ISSI
2023+
TSOP
53500
正品,原装现货
ISSIE
26+
TSOP
29231
原装正品价格优惠,长期优势供应
ISSI
24+
TSOP44
9860
一级代理/全新现货/长期供应!

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