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IS61LV12816L价格

参考价格：￥22.7754

型号：IS61LV12816L-10TL 品牌：ISSI 备注：这里有IS61LV12816L多少钱，2025年最近7天走势，今日出价，今日竞价，IS61LV12816L批发/采购报价，IS61LV12816L行情走势销售排行榜，IS61LV12816L报价。

型号	功能描述	生产厂家企业	LOGO
IS61LV12816L	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w	ISSI 矽成半导体	ISSI
IS61LV12816	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ISSI 矽成半导体	ISSI
IS61LV12816	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi	ICSI	ICSI
IS61LV12816L-10BI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w	ISSI 矽成半导体	ISSI
IS61LV12816L-10BLI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w	ISSI 矽成半导体	ISSI
IS61LV12816L-10LQI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w	ISSI 矽成半导体	ISSI
IS61LV12816L-10LQLI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w	ISSI 矽成半导体	ISSI
IS61LV12816L-10T	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w	ISSI 矽成半导体	ISSI
IS61LV12816L-10TI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w	ISSI 矽成半导体	ISSI
IS61LV12816L-10TL	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w	ISSI 矽成半导体	ISSI
IS61LV12816L-10TLI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w	ISSI 矽成半导体	ISSI
IS61LV12816L-8BI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w	ISSI 矽成半导体	ISSI
IS61LV12816L-8T	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w	ISSI 矽成半导体	ISSI
IS61LV12816L-8TI	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w	ISSI 矽成半导体	ISSI
IS61LV12816L-8TL	128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns w	ISSI 矽成半导体	ISSI
IS61LV12816L-10BI-TR	封装/外壳：48-TFBGA 包装：卷带（TR）描述：IC SRAM 2MBIT PARALLEL 48MINIBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LV12816L-10BLI	静态随机存取存储器 2Mb 128Kx16 10ns Async 静态随机存取存储器 3.3v	ISSI 矽成半导体	ISSI
IS61LV12816L-10BLI	封装/外壳：48-TFBGA 包装：卷带（TR）描述：IC SRAM 2MBIT PARALLEL 48MINIBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LV12816L-10BLI-TR	静态随机存取存储器 2Mb 128Kx16 10ns Async 静态随机存取存储器 3.3v	ISSI 矽成半导体	ISSI
IS61LV12816L-10LQLI	静态随机存取存储器 2Mb 128Kx16 10ns Async 静态随机存取存储器 3.3v	ISSI 矽成半导体	ISSI
IC61LV12816	128K x 16 Hight Speed SRAM with 3.3V DESCRIPTION The ICSI IC61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with	ICSI	ICSI

IS61LV12816L产品属性

类型
描述
型号
IS61LV12816L
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV12816L供应商更多...

更新时间：2025-11-23 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	IS61LV12816L-10BI	ISSI	24+	NA/	7280	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市富利微电子科技有限公司	IS61LV12816L-10	ISSI	24+	TSOP-44	30000	原装正品公司现货,假一赔十!	询价
深圳市科芯源微电子有限公司	IS61LV12816L-10TLI	ISSI	23+	TSOP44	56248	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市明嘉莱科技有限公司	IS61LV12816L-10TL	ISSI	24+	TSOP-44	161685	明嘉莱只做原装正品现货	询价
瀚佳科技(深圳)有限公司	IS61LV12816L-10TLI	ISSI	24+	TSOP44	9860	一级代理/全新现货/长期供应!	询价
深圳市华斯顿科技有限公司	IS61LV12816L-10BI	ISSI	25+23+	BGA	53716	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市胜彬电子有限公司	IS61LV12816L-10BI	ISSI	22+	BGA	8000	原装正品支持实单	询价
深圳市恒凯威科技开发有限公司	IS61LV12816L-10	ISSI	21+	TSOP-44	10000	只做原装,质量保证	询价
标准国际(香港)有限公司	IS61LV12816L-10	IS61LV12816L-10	25+	30	30		询价
深圳市金华微盛电子有限公司	IS61LV12816L-10LQI	ISSI	19+	QFP44	12600		询价

IS61LV12816L芯片相关品牌

IS61LV12816L规格书下载地址

IS61LV12816L参数引脚图相关

IS61LV12816L数据表相关新闻

IS61C1024AL-12KLI
进口代理
2022-9-21
IS61C5128AS-25TLI
进口代理
2022-8-10
IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7
IS61SF12832-8.5TQ
原装正品热卖假一赔十
2020-7-13
IS46TR16256AL-125KBLA2
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1

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IS61LV12816L价格

IS61LV12816L产品属性

IS61LV12816L供应商更多...

IS61LV12816L芯片相关品牌

IS61LV12816L规格书下载地址

IS61LV12816L参数引脚图相关

IS61LV12816L数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS61SF12832-8.5TQ

IS46TR16256AL-125KBLA2

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

DdatasheetPDF页码索引