IS61LPS102418A价格

参考价格:¥132.5146

型号:IS61LPS102418A-200TQLI 品牌:ISSI 备注:这里有IS61LPS102418A多少钱,2025年最近7天走势,今日出价,今日竞价,IS61LPS102418A批发/采购报价,IS61LPS102418A行情走势销售排行榜,IS61LPS102418A报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS61LPS102418A

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

IS61LPS102418A

Synchronous SRAM

ISSI

矽成半导体

IS61LPS102418A

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

IS61LPS102418A

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

封装/外壳:165-TBGA 包装:托盘 描述:IC SRAM 18MBIT PARALLEL 165TFBGA 集成电路(IC) 存储器

ETC

知名厂家

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

封装/外壳:165-TBGA 包装:卷带(TR) 描述:IC SRAM 18MBIT PARALLEL 165TFBGA 集成电路(IC) 存储器

ETC

知名厂家

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

文件:220.58 Kbytes Page:34 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM

文件:375.56 Kbytes Page:35 Pages

ISSI

矽成半导体

512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and • control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs

ISSI

矽成半导体

Internal self-timed write cycle

文件:1.91707 Mbytes Page:33 Pages

ISSI

矽成半导体

IS61LPS102418A产品属性

  • 类型

    描述

  • 型号

    IS61LPS102418A

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

更新时间:2025-12-14 15:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
1701+
?
8450
只做原装进口,假一罚十
ISSIINTEGRATEDSILICONSOLUTIONI
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ISSI(美国芯成)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
ISSI
24+
SMD
12000
专营ISSI进口原装正品假一赔十可開17增值稅票
ISSI
21+
TQFP100
1975
ISSI
23+
12+
64717
##公司主营品牌长期供应100%原装现货可含税提供技术
ISSI
2223+
TQFP100
26800
只做原装正品假一赔十为客户做到零风险
ISSI, Integrated Silicon Solut
21+
BGA
1000
进口原装!长期供应!绝对优势价格(诚信经营
ISSI
24+
NA
53905
ISSI
23+
TQFP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、

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