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位置：首页 > IC中文资料 > IS43TR82560C

型号 功能描述 生产厂家 企业 LOGO 操作
IS43TR82560C

Programmable CAS Latency

文件：3.82435 Mbytes Page：88 Pages

ISSI

矽成半导体

IS43TR82560C

1.5V DDR3 SDRAM

ISSI

矽成半导体

IS43TR82560C-107MBL

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

ISSI

矽成半导体

IS43TR82560C-107MBLI

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

ISSI

矽成半导体

IS43TR82560C-125KBL

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

ISSI

矽成半导体

IS43TR82560C-125KBLI

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

ISSI

矽成半导体

IS43TR82560C-15HBL

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

ISSI

矽成半导体

IS43TR82560C-15HBLI

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

ISSI

矽成半导体

IS43TR82560CL-125KBL

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

ISSI

矽成半导体

IS43TR82560CL-125KBLI

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

ISSI

矽成半导体

IS43TR82560CL-15HBL

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

ISSI

矽成半导体

IS43TR82560CL-15HBLI

256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 933 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  P

ISSI

矽成半导体

IS43TR82560C-125KBLI-TR

封装/外壳：78-TFBGA 包装：托盘 描述：IC DRAM 2GBIT PARALLEL 78TWBGA 集成电路（IC） 存储器

ETC

知名厂家

IS43TR82560C-15HBL

封装/外壳：78-TFBGA 包装：卷带（TR） 描述：IC DRAM 2GBIT PARALLEL 78TWBGA 集成电路（IC） 存储器

ETC

知名厂家

IS43TR82560CL

Programmable CAS Latency

文件：3.82435 Mbytes Page：88 Pages

ISSI

矽成半导体

IS43TR82560CL

1.35V DDR3L SDRAM

ISSI

矽成半导体

IS43TR82560B

Programmable CAS Latency

文件：3.85869 Mbytes Page：88 Pages

ISSI

矽成半导体

IS43TR82560BL

Programmable CAS Latency

文件：3.85869 Mbytes Page：88 Pages

ISSI

矽成半导体

IS43TR82560C供应商更多...

更新时间：2025-9-26 8:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市斌腾达科技有限公司
IS43TR82560CL-125KBLI
ISSI, Integrated Silicon Solut
21+
48-LFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
深圳市华睿芯科技有限公司
IS43TR82560C-125KBL
ISSI
24+
BGA
6358
原厂原装正品现货,代理渠道,支持订货!!!
询价
深圳市天芯威科技有限公司
IS43TR82560C-15HBLI
ISSI
24+
n/a
25836
新到现货,只做原装进口
询价
贸泽芯城（深圳）电子科技有限公司
IS43TR82560C-15HBLI
ISSI
23+
BGA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
瀚佳科技(深圳)有限公司
IS43TR82560CL-125KBLI
ISSI, Integrated Silicon Solut
24+
78-TWBGA(8x10.5)
56200
一级代理/放心采购
询价
深圳市亿联芯电子科技有限公司
IS43TR82560C-125KBLI
ISSI
2023+
SMD
8635
一级代理优势现货,全新正品直营店
询价
深圳市华康联电子科技有限公司
IS43TR82560C-125KBLI-TR
ISSI
24+
N/A
10000
只做原装,实单最低价支持
询价
艾睿（深圳）半导体有限公司
IS43TR82560CL-125KBLI
ISSIINTEGRATEDSILICONSOLUTIONI
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市安富世纪电子有限公司
IS43TR82560CL-15HBL-TR
ISSI, Integrated Silicon Solu
23+
78-TWBGA8x10.5
7300
专注配单,只做原装进口现货
询价
天津市博通航睿技术有限公司
IS43TR82560C-15HBLI
ISSI
5
询价

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