型号 功能描述 生产厂家 企业 LOGO 操作
IS43DR16640B-3DBI-TR

封装/外壳:84-TFBGA 包装:托盘 描述:IC DRAM 1GBIT PARALLEL 84TWBGA 集成电路(IC) 存储器

ETC

知名厂家

1Gb (x8, x16) DDR2 SDRAM

FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4‐bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency‐1  Programmable Burst Sequence: Sequential

ISSI

矽成半导体

1Gb (x8, x16) DDR2 SDRAM

FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4‐bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency‐1  Programmable Burst Sequence: Sequential

ISSI

矽成半导体

1Gb (x8, x16) DDR2 SDRAM

FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4‐bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency‐1  Programmable Burst Sequence: Sequential

ISSI

矽成半导体

IS43DR16640B-3DBI-TR产品属性

  • 类型

    描述

  • 型号

    IS43DR16640B-3DBI-TR

  • 功能描述

    动态随机存取存储器 1G(64Mx16) 333MHz DDR2 1.8v

  • RoHS

  • 制造商

    ISSI

  • 数据总线宽度

    16 bit

  • 组织

    1 M x 16

  • 封装/箱体

    SOJ-42

  • 存储容量

    16 MB

  • 访问时间

    50 ns

  • 电源电压-最大

    7 V

  • 电源电压-最小

    - 1 V

  • 最大工作电流

    90 mA

  • 最大工作温度

    + 85 C

  • 封装

    Tube

更新时间:2025-11-18 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
NA/
2450
优势代理渠道,原装正品,可全系列订货开增值税票
ISSI
20+
84-TFBGA
65790
原装优势主营型号-可开原型号增税票
ISSI
1402+
BGA
170
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI, Integrated Silicon Solut
21+
119-BGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
ISSI
25+
BGA
10500
全新原装现货,假一赔十
ISSI
22+
TWBGA-84
12245
现货,原厂原装假一罚十!
ISSI
23+
BGA
6000
专业配单保证原装正品假一罚十
ISSI
25+23+
BGA
25625
绝对原装正品全新进口深圳现货
ISSI
2023+
TWBGA-84
2450
一级代理优势现货,全新正品直营店
ISSI
23+
84-FBGA(8x12.5)
73390
专业分销产品!原装正品!价格优势!

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