128Mb SYNCHRONOUS DRAM

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SDR SDRAM

封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC DRAM 128MBIT PAR 54TSOP II 集成电路（IC） 存储器

封装/外壳：54-TFBGA 包装：卷带（TR） 描述：IC DRAM 128MBIT PARALLEL 54TFBGA 集成电路（IC） 存储器

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

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3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The IC42S81600 and IC42S16800 are high-speed 134,217,728-bit synchronous dynamic randomaccess memories, organized as 4,194,304 x 8 x 4 and 2,097,152 x 16 x 4 (word x bit x bank), respectively. FEATURES • Single 3.3V (± 0.3V) power supply • High speed clock cycle time -6: 166MHz, -7

4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The IC42S81600 and IC42S16800 are high-speed 134,217,728-bit synchronous dynamic randomaccess memories, organized as 4,194,304 x 8 x 4 and 2,097,152 x 16 x 4 (word x bit x bank), respectively. FEATURES • Single 3.3V (± 0.3V) power supply • High speed clock cycle time -6: 166MHz, -7

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

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