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位置：首页 > IC中文资料第12485页 > IS42S16800D

型号 功能描述 生产厂家 企业 LOGO 操作
IS42S16800D

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-6B

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-6BL

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-6T

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-6TL

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-6TLI

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-75EBL

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-75EBLI

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-75ETL

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-75ETLI

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-7B

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-7BI

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-7BL

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-7BLI

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-7T

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-7TI

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-7TL

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-7TLI

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-6B-TR

封装/外壳：54-VFBGA 包装：卷带（TR） 描述：IC DRAM 128MBIT PAR 54MINIBGA 集成电路（IC） 存储器

ETC

知名厂家

IS42S16800D-6T

封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC DRAM 128MBIT PAR 54TSOP II 集成电路（IC） 存储器

ETC

知名厂家

IS42S16800A

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件：556.97 Kbytes Page：66 Pages

ICSI

42S16800L

3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

IC42S16800

4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The IC42S81600 and IC42S16800 are high-speed 134,217,728-bit synchronous dynamic randomaccess memories, organized as 4,194,304 x 8 x 4 and 2,097,152 x 16 x 4 (word x bit x bank), respectively. FEATURES • Single 3.3V (± 0.3V) power supply • High speed clock cycle time -6: 166MHz, -7

ICSI

IC42S16800L

4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The IC42S81600 and IC42S16800 are high-speed 134,217,728-bit synchronous dynamic randomaccess memories, organized as 4,194,304 x 8 x 4 and 2,097,152 x 16 x 4 (word x bit x bank), respectively. FEATURES • Single 3.3V (± 0.3V) power supply • High speed clock cycle time -6: 166MHz, -7

ICSI

42S16800A

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件：540.49 Kbytes Page：61 Pages

ISSI

矽成半导体

IS42S16800D产品属性

  • 类型

    描述

  • 型号

    IS42S16800D

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

IS42S16800D供应商更多...

更新时间：2025-9-26 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
IS42S16800D-6BL
ISSI
24+
NA/
3689
原装现货,当天可交货,原型号开票
询价
深圳市凌旭科技有限公司
IS42S16800D-7TLI
ISSI
2016+
TSSOP
2600
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市纳艾斯科技有限公司
IS42S16800D-7TL
ISSI
24+
TSOP
6000
全新原装正品现货 假一赔佰
询价
深圳市科芯源微电子有限公司
IS42S16800D-7TL
ISSI
25+
TSOP
996880
只做原装,欢迎来电资询
询价
深圳市勤思达科技有限公司
IS42S16800D-7TL
ISSI
24+
TSOP54
5000
全新原装正品,现货销售
询价
中天科工半导体（深圳）有限公司
IS42S16800D-7TL
ISSI
存储器
TSOP
41945
ISSI存储芯片IS42S16800D-7TL即刻询购立享优惠#长期有货
询价
深圳市华睿芯科技有限公司
IS42S16800D-7TL
ISSI
24+
TSOP
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市威雅利发展有限公司
IS42S16800D-7TLI
ISSI
1034+
TOSP56
700
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市粤骏腾电子科技有限公司
IS42S16800D-7TLI
ISSI
24+
TSOP
20000
不忘初芯-只做原装正品
询价
深圳市诺美思科技有限公司
IS42S16800D-7TLI
ISSI
原厂封装
9800
原装进口公司现货假一赔百
询价

IS42S16800D芯片相关品牌

IS42S16800D规格书下载地址

IS42S16800D参数引脚图相关

IS42S16800D数据表相关新闻

  • IS42S16800F

    IS42S16800F,全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三，V:八七六八零五五八.

    2021-7-19

  • IS42S16800D-7TLI

    SDRAM 16 bit 动态随机存取存储器 , BGA-54 SDRAM 动态随机存取存储器 , SDRAM 32 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3 动态随机存取存储器 , 512 Mbit SDRAM 32 bit 133 MHz - 40 C 动态随机存取存储器 , 512 Mbit TSOP-54 SDRAM 16 bit 动态随机存取存储器

    2020-7-8

  • IS42S16400A-7T现货

    深圳市拓亿芯电子有限公司，本公司具备一般纳税人，可开13点增值税票， 货源渠道保证原厂原装正品IC，诚信为本，薄利多销。

    2019-12-13

  • IS42S16400J-6TLI

    IS42S16400J-6TLI，全新原装当天发货或门市自取0755-82732291.

    2019-9-17

  • IS42S16800F-6TL

    IS42S16800F-6TL

    2019-3-5

  • IS42S16320B-7TL-TR

    IS42S16320B-7TL-TR

    2019-3-5

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