型号 功能描述 生产厂家 企业 LOGO 操作
IS42S16800D-7T

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-7T

封装/外壳:54-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 128MBIT PAR 54TSOP II 集成电路(IC) 存储器

ETC

知名厂家

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

封装/外壳:54-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 128MBIT PAR 54TSOP II 集成电路(IC) 存储器

ETC

知名厂家

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

IS42S16800D-7T产品属性

  • 类型

    描述

  • 型号

    IS42S16800D-7T

  • 制造商

    Integrated Silicon Solution Inc

  • 功能描述

    IC SDRAM 128MBIT 143MHZ 54TSOP

更新时间:2026-1-31 15:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
23+
54-TSOPII
65480
ISSI
24+
TSOP
6000
全新原装正品现货 假一赔佰
ISSI
20+
TSOP
2960
诚信交易大量库存现货
ISSI
1716+
?
8450
只做原装进口,假一罚十
ISSI
26+
54-TSOPII
9231
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
ISSI
存储器
TSOP
41945
ISSI存储芯片IS42S16800D-7TL即刻询购立享优惠#长期有货
ISSI
2023+
54-TSOPII
50000
原装现货
ISSI, Integrated Silicon Solu
23+
54-TSOP II
7300
专注配单,只做原装进口现货
ISSI(美国芯成)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
ISSI
2518+
TSOP
1546
只做原装正品现货或订货假一赔十!

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