IS42S16800价格

参考价格:¥23.8669

型号:IS42S16800E-6TL 品牌:ISSI 备注:这里有IS42S16800多少钱,2025年最近7天走势,今日出价,今日竞价,IS42S16800批发/采购报价,IS42S16800行情走势销售排行榜,IS42S16800报价。
型号 功能描述 生产厂家 企业 LOGO 操作

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

ISSI

矽成半导体

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:540.49 Kbytes Page:61 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:556.97 Kbytes Page:66 Pages

ICSI

8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件:962.56 Kbytes Page:63 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:556.97 Kbytes Page:66 Pages

ICSI

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:556.97 Kbytes Page:66 Pages

ICSI

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:556.97 Kbytes Page:66 Pages

ICSI

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:540.49 Kbytes Page:61 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:556.97 Kbytes Page:66 Pages

ICSI

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:540.49 Kbytes Page:61 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:540.49 Kbytes Page:61 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:540.49 Kbytes Page:61 Pages

ISSI

矽成半导体

8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件:962.56 Kbytes Page:63 Pages

ISSI

矽成半导体

8Meg x 16 128-MBIT SYNCHRONOUS DRAM

ISSI

矽成半导体

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:540.49 Kbytes Page:61 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:540.49 Kbytes Page:61 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:556.97 Kbytes Page:66 Pages

ICSI

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:556.97 Kbytes Page:66 Pages

ICSI

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:556.97 Kbytes Page:66 Pages

ICSI

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:540.49 Kbytes Page:61 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:556.97 Kbytes Page:66 Pages

ICSI

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:540.49 Kbytes Page:61 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:540.49 Kbytes Page:61 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

文件:540.49 Kbytes Page:61 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件:563.68 Kbytes Page:60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件:563.68 Kbytes Page:60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件:563.68 Kbytes Page:60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件:563.68 Kbytes Page:60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件:563.68 Kbytes Page:60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件:563.68 Kbytes Page:60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件:563.68 Kbytes Page:60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件:563.68 Kbytes Page:60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件:563.68 Kbytes Page:60 Pages

ISSI

矽成半导体

封装/外壳:54-VFBGA 包装:卷带(TR) 描述:IC DRAM 128MBIT PAR 54MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:54-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 128MBIT PAR 54TSOP II 集成电路(IC) 存储器

ETC

知名厂家

16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM

文件:934.55 Kbytes Page:61 Pages

ISSI

矽成半导体

128Mb SYNCHRONOUS DRAM

文件:971.87 Kbytes Page:61 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SDR SDRAM

ISSI

矽成半导体

16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM

文件:934.55 Kbytes Page:61 Pages

ISSI

矽成半导体

16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM

文件:934.55 Kbytes Page:61 Pages

ISSI

矽成半导体

16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM

文件:934.55 Kbytes Page:61 Pages

ISSI

矽成半导体

16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM

文件:934.55 Kbytes Page:61 Pages

ISSI

矽成半导体

IS42S16800产品属性

  • 类型

    描述

  • 型号

    IS42S16800

  • 制造商

    ICSI

  • 制造商全称

    Integrated Circuit Solution Inc

  • 功能描述

    16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

更新时间:2025-12-11 16:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
2450+
TSSOP
8850
只做原装正品假一赔十为客户做到零风险!!
ISSI
24+
SOP
30617
主打ISSI品牌价格绝对优势
ISSI
SOP
1200
正品原装--自家现货-实单可谈
ISSI
2025+
TSOP
3615
全新原厂原装产品、公司现货销售
ISSI
SOP
5350
一级代理 原装正品假一罚十价格优势长期供货
ISSI
20+
TSOP54
2960
诚信交易大量库存现货
ISSI
23+
SOP
20000
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全
ISSI
25+
TSSOP
880000
明嘉莱只做原装正品现货
ISSI, Integrated Silicon Solu
23+
54-TSOP II
7300
专注配单,只做原装进口现货
ISSI
23+
SOP
7000

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