IS42S16320B价格

参考价格:¥79.0956

型号:IS42S16320B-6TL 品牌:ISSI 备注:这里有IS42S16320B多少钱,2025年最近7天走势,今日出价,今日竞价,IS42S16320B批发/采购报价,IS42S16320B行情走势销售排行榜,IS42S16320B报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IS42S16320B

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

北京矽成

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

北京矽成

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

北京矽成

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

北京矽成

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

北京矽成

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

北京矽成

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

北京矽成

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

北京矽成

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

北京矽成

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

北京矽成

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

ISSI

北京矽成

封装/外壳:54-TFBGA 包装:卷带(TR) 描述:IC DRAM 512MBIT PARALLEL 54WBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:54-TFBGA 包装:卷带(TR) 描述:IC DRAM 512MBIT PARALLEL 54WBGA 集成电路(IC) 存储器

ETC

知名厂家

Internal bank for hiding row access/precharge

文件:1.57364 Mbytes Page:66 Pages

ISSI

北京矽成

8K refresh cycles every 64 ms

文件:1.71168 Mbytes Page:68 Pages

ISSI

北京矽成

IS42S16320B产品属性

  • 类型

    描述

  • 型号

    IS42S16320B

  • 功能描述

    动态随机存取存储器 512M(32Mx16) 166MHz S动态随机存取存储器, 3.3v

  • RoHS

  • 制造商

    ISSI

  • 数据总线宽度

    16 bit

  • 组织

    1 M x 16

  • 封装/箱体

    SOJ-42

  • 存储容量

    16 MB

  • 访问时间

    50 ns

  • 电源电压-最大

    7 V

  • 电源电压-最小

    - 1 V

  • 最大工作电流

    90 mA

  • 最大工作温度

    + 85 C

  • 封装

    Tube

更新时间:2025-8-17 8:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI/矽成
21+
SOP
7000
正品渠道现货,终端可提供BOM表配单。
ISSI, Integrated Silicon Solut
21+
144-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
ISSI
2430+
TSOP
8540
只做原装正品假一赔十为客户做到零风险!!
ISSI
24+
BGA
23000
免费送样原盒原包现货一手渠道联系
ISSI
24+
TSOP54
8950
BOM配单专家,发货快,价格低
ISSI
TSOP
1000
正品原装--自家现货-实单可谈
ISSI
25+
WBGA-54
16000
原装优势绝对有货
ISSI
存储器
SOP
41943
ISSI存储芯片IS42S16320B-7TLI即刻询购立享优惠#长期有货
ISSI
14+
TSOP
9860
大量原装进口现货,一手货源,一站式服务,可开17%增
ISSI
16+
ON
4000
进口原装现货/价格优势!

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