型号 功能描述 生产厂家 企业 LOGO 操作
IS41LV16256B

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IS41C16256 and IS41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. The IS41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10 n

ICSI

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

ISSI

矽成半导体

256Kx16 bit Dynamic RAM with EDO Page Mode

DESCRIPTION The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10

ICSI

IS41LV16256B产品属性

  • 类型

    描述

  • 型号

    IS41LV16256B

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

更新时间:2025-11-3 21:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
20+
TSOP44
2960
诚信交易大量库存现货
ISSI
24+
NA/
6795
原装现货,当天可交货,原型号开票
现货ISSI
25+
原厂原封可拆样
65248
百分百原装现货 实单必成
ISSI
24+
TSOP
27000
绝对全新原装现货特价销售,欢迎来电查询
INTEGRATEDS
23+
原厂封装
9888
专做原装正品,假一罚百!
ISSI
23+
NA
10
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
ISSI
原厂封装
9800
原装进口公司现货假一赔百
ISSI
22+
SOJ
8000
原装正品支持实单
ISSI
25+
TSOP
3000
全新原装、诚信经营、公司现货销售
ISSI
25+
QFN
18000
原厂直接发货进口原装

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