256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word.

256Kx16 bit Dynamic RAM with EDO Page Mode

DESCRIPTION The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10

256Kx16 bit Dynamic RAM with EDO Page Mode

DESCRIPTION The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10

256Kx16 bit Dynamic RAM with EDO Page Mode

DESCRIPTION The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10

256Kx16 bit Dynamic RAM with EDO Page Mode

DESCRIPTION The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10

256Kx16 bit Dynamic RAM with EDO Page Mode

DESCRIPTION The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10