型号 功能描述 生产厂家&企业 LOGO 操作
IS41LV16105B-60TE

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

北京矽成

IS41LV16105B-60TE产品属性

  • 类型

    描述

  • 型号

    IS41LV16105B-60TE

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

更新时间:2025-8-13 18:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
06+
TSOP44
5
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI, Integrated Silicon Solu
23+
44-TSOP II
7300
专注配单,只做原装进口现货
ISSI
23+
44-TSOPII
1389
专业分销产品!原装正品!价格优势!
ISSI
23+
TSOP
4718
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ISSI Integrated Silicon Soluti
22+
44TSOP II
9000
原厂渠道,现货配单
ISSI, Integrated Silicon Solu
23+
44-TSOP II
7300
专注配单,只做原装进口现货
ISSIINTEGRATEDSILICONSOLUTIONI
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ISSI, Integrated Silicon Solut
24+
44-TSOP II
56200
一级代理/放心采购
ISSI Integrated Silicon Solut
25+
44-TSOP(0.400 10.16mm 宽)
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ISSI
2020+
SOJ(42)
3850
百分百原装正品 真实公司现货库存 本公司只做原装 可

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