位置：首页 > IC中文资料第9752页 > IS41LV16105B-60T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IS41LV16105B-60T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV | ISSI 北京矽成 |   | |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV | ISSI 北京矽成 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV | ISSI 北京矽成 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV | ISSI 北京矽成 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV | ISSI 北京矽成 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV | ISSI 北京矽成 | | ||
封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC DRAM 16MBIT PAR 44TSOP II 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC DRAM 16MBIT PAR 44TSOP II 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV | ISSI 北京矽成 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV | ISSI 北京矽成 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV | ISSI 北京矽成 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV | ISSI 北京矽成 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV | ISSI 北京矽成 | |
IS41LV16105B-60T产品属性
- 类型
描述
- 型号
IS41LV16105B-60T
- 功能描述
动态随机存取存储器 16M 1Mx16 60ns
- RoHS
否
- 制造商
ISSI
- 数据总线宽度
16 bit
- 组织
1 M x 16
- 封装/箱体
SOJ-42
- 存储容量
16 MB
- 访问时间
50 ns
- 电源电压-最大
7 V
- 电源电压-最小
- 1 V
- 最大工作电流
90 mA
- 最大工作温度
+ 85 C
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
06+ |
TSOP44 |
5 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI, Integrated Silicon Solu |
23+ |
44-TSOP II |
7300 |
专注配单,只做原装进口现货 |
|||
ISSI |
23+ |
44-TSOPII |
71890 |
专业分销产品!原装正品!价格优势! |
|||
ISSI |
23+ |
TSOP |
4718 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ISSI Integrated Silicon Soluti |
22+ |
44TSOP II |
9000 |
原厂渠道,现货配单 |
|||
ISSIINTEGRATEDSILICONSOLUTIONI |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ISSI, Integrated Silicon Solu |
23+ |
44-TSOP II |
7300 |
专注配单,只做原装进口现货 |
|||
ISSI, Integrated Silicon Solut |
24+ |
44-TSOP II |
56200 |
一级代理/放心采购 |
|||
ISSI Integrated Silicon Solut |
25+ |
44-TSOP(0.400 10.16mm 宽) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ISSI |
2020+ |
SOJ(42) |
3850 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
IS41LV16105B-60T芯片相关品牌
IS41LV16105B-60T规格书下载地址
IS41LV16105B-60T参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IS471F
- IS457
- IS456
- IS455
- IS452
- IS450
- IS445
- IS440F
- IS440
- IS438
- IS437
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- IS435
- IS432
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- IS42SM
- IS423
- IS422
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- IS41LV16256-60K
- IS41LV16256-50T
- IS41LV16256-50K
- IS41LV16256-35T
- IS41LV16256-35K
- IS41LV16256
- IS41LV16105C-50TLI-TR
- IS41LV16105C-50TLI
- IS41LV16105C-50TL
- IS41LV16105C-50KLI-TR
- IS41LV16105C-50KLI
- IS41LV16105B-60T-TR
- IS41LV16105B-60TL-TR
- IS41LV16105B-60TLI-TR
- IS41LV16105B-60TLI
- IS41LV16105B-60TLE
- IS41LV16105B-60TL
- IS41LV16105B-60TI-TR
- IS41LV16105B-60TI
- IS41LV16105B-60TE
- IS41LV16105B-60K-TR
- IS41LV16105B-60KL-TR
- IS41LV16105B-60KLI-TR
- IS41LV16105B-60KLI
- IS41LV16105B-60KLE
- IS41LV16105B-60KL
- IS41LV16105B-60KI-TR
- IS41LV16105B-60KI
- IS41LV16105B-60KE
- IS41LV16105B-60K
- IS41LV16105B-50T-TR
- IS41LV16105B-50TL-TR
- IS41LV16105B-50TLI-TR
- IS41LV16105B-50TLI
- IS41LV16105B-50TLE
- IS41LV16105B-50TL
- IS41LV16105B-50TI-TR
- IS41LV16105B-50TI
- IS41LV16105B-50TE
- IS41LV16105B-50T
- IS4100
- IS3H7
- IS3H4
- IS3H&K
- IS3H&J
- IS3H&I
- IS3H&H
- IS3H&GR
- IS3H&GB
- IS3H&F
- IS3H&E
- IS3H&D
- IS3H&C
- IS3H&B
- IS3H&A
- IS357B
- IS357A
- IS357
- IS355
- IS354
IS41LV16105B-60T数据表相关新闻
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2019-5-8
DdatasheetPDF页码索引
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