型号 功能描述 生产厂家 企业 LOGO 操作
IS41LV16100S-60T

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

IS41LV16100S-60T产品属性

  • 类型

    描述

  • 型号

    IS41LV16100S-60T

  • 制造商

    ICSI

  • 制造商全称

    Integrated Circuit Solution Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

更新时间:2025-9-24 13:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
TSOP
13718
只做原装 公司现货库存
ISSI
2023+
TSOP
50000
原装现货
ISSI
23+
TSOP44
17012
原厂授权一级代理,专业海外优势订货,价格优势、品种
ISSI
23+
51112
##公司主营品牌长期供应100%原装现货可含税提供技术
ISSI
23+
SOJ
8000
只做原装现货
ISSI
2447
SOJ
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ISSI
23+
SOJ
50000
全新原装正品现货,支持订货
ISSI
9938+
TSOP
4
原装
ISSI
24+
SOJ
5000
只做原装公司现货
ISSI
24+
SOJ
12000
原装正品 有挂就有货

IS41LV16100S-60T数据表相关新闻