型号 功能描述 生产厂家&企业 LOGO 操作
IS41LV16100S-50K

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

IS41LV16100S-50K产品属性

  • 类型

    描述

  • 型号

    IS41LV16100S-50K

  • 制造商

    ICSI

  • 制造商全称

    Integrated Circuit Solution Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

更新时间:2025-8-8 19:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI/芯成
24+
SOJ42
880000
明嘉莱只做原装正品现货
ISSI
23+
SOJ
55255
##公司主营品牌长期供应100%原装现货可含税提供技术
ISSI
25+
SOJ
3200
全新原装、诚信经营、公司现货销售
ICSI
23+
NA
19960
只做进口原装,终端工厂免费送样
ISSI
01+
SOJ
5
原装现货支持BOM配单服务
ISSI
2015+
DIP/SMD
19889
一级代理原装现货,特价热卖!
ISSI/矽成
0332
DRAM/1MX16EDO/SOJ-42/50N
4655
原装香港现货真实库存。低价
ISSI
2023+
SOJ
50000
原装现货
ICSI
24+
SOJ
4500
只做原装正品现货 欢迎来电查询15919825718
23+
原厂封装
9888
专做原装正品,假一罚百!

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