位置：首页 > IC中文资料第6780页 > IS41LV16100A-60KLI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IS41LV16100A-60KLI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 北京矽成 |   | |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 北京矽成 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 北京矽成 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 北京矽成 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor | ICSI | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor | ICSI | |
IS41LV16100A-60KLI产品属性
- 类型
描述
- 型号
IS41LV16100A-60KLI
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ISSI |
1948+ |
SOJ-42 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
ISSI, Integrated Silicon Solu |
23+ |
42-SOJ |
7300 |
专注配单,只做原装进口现货 |
|||
ISSI/芯成 |
24+ |
SOJ42 |
990000 |
明嘉莱只做原装正品现货 |
|||
ISSI |
23+ |
SOJ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ISSI |
25+23+ |
SOJ42 |
33474 |
绝对原装正品全新进口深圳现货 |
|||
ISSI |
22+ |
SOJ-42 |
8000 |
原装正品支持实单 |
|||
ISSI |
23+ |
42-SOJ |
73390 |
专业分销产品!原装正品!价格优势! |
|||
ISSI |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
ISSI, Integrated Silicon Solut |
24+ |
42-SOJ |
56200 |
一级代理/放心采购 |
IS41LV16100A-60KLI芯片相关品牌
IS41LV16100A-60KLI规格书下载地址
IS41LV16100A-60KLI参数引脚图相关
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- IS41LV16100B-50T-TR
- IS41LV16100B-50TL-TR
- IS41LV16100B-50TLI-TR
- IS41LV16100B-50TLI
- IS41LV16100B-50TL
- IS41LV16100B-50TI
- IS41LV16100B-50T
- IS41LV16100B-50K-TR
- IS41LV16100B-50KL-TR
- IS41LV16100B-50KLI-TR
- IS41LV16100B-50KLI
- IS41LV16100B-50KL
- IS41LV16100B-50KI-TR
- IS41LV16100B-50KI
- IS41LV16100B-50K
- IS41LV16100B
- IS41LV16100A-60TLI
- IS41LV16100A-60TL
- IS41LV16100A-60TI
- IS41LV16100A-60T
- IS41LV16100A-60KL
- IS41LV16100A-60KI
- IS41LV16100A-60K
- IS41LV16100A-50TLI
- IS41LV16100A-50TL
- IS41LV16100A-50TI
- IS41LV16100A-50T
- IS41LV16100A-50KLI
- IS41LV16100A-50KL
- IS41LV16100A-50KI
- IS41LV16100A-50K
- IS41LV16100A
- IS41LV16100-60TLI
- IS41LV16100-60TL
- IS41LV16100-60TI
- IS41LV16100-60T
- IS41LV16100-60KI
- IS41LV16100-60K
- IS41LV16100-50TLI
- IS41LV16100-50TL
- IS4100
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- IS357B
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IS41LV16100A-60KLI数据表相关新闻
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2019-5-8
DdatasheetPDF页码索引
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